Document
MBR4015CTLG
Switch-mode Power Rectifier
Features and Benefits
• Low Forward Voltage • Low Power Loss/High Efficiency • High Surge Capacity • 150°C Operating Junction Temperature • 40 A Total (20 A Per Diode Leg) • This Device is Pb−Free and is RoHS Compliant*
Applications
• Power Supply – Output Rectification • Power Management • Instrumentation
Mechanical Characteristics
• Case: Epoxy, Molded • Epoxy Meets UL 94, V−0 @ 0.125 in • Weight: 1.9 Grams (Approximately) • Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
• Lead Temperatures for Soldering Purposes: 260°C Max. for 10 Seconds • ESD Rating: Human Body Model 3B
Machine Model C
www.onsemi.com
SCHOTTKY BARRIER RECTIFIER
40 AMPERES, 15 VOLTS
1 2, 4
3 4
1 2 3 TO−220 STYLE 6
CASE 221A MARKING DIAGRAM
AY WW B4015LG
AKA
*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2015
January, 2015 − Rev. 7
1
A = Assembly Location Y = Year WW = Work Week B4015L = Device Code G = Pb−Free Package AKA = Polarity Designator
ORDERING INFORMATION
Device MBR4015CTLG
Package
TO−220 (Pb−Free)
Shipping 50 Units/Rail
Publication Order Number: MBR4015CTL/D
MBR4015CTLG
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage
Average Rectified Forward Current (TC = 140°C per Diode) (TC = 140°C per Device)
Peak Repetitive Forward Current, per Diode (Square Wave, 20 kHz, TC = 135°C)
Non−Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions, Halfwave, Single Phase, 60 Hz)
VRRM VRWM
VR
IF(AV)
15
20 40
V A
IFRM 40 A IFSM 150 A
Peak Repetitive Reverse Surge Current (2.0 ms, 1.0 kHz)
IRRM 1.0 A
Storage Temperature Range
Tstg
−65 to +175
°C
Operating Junction Temperature (Note 1)
TJ
−65 to +150
°C
Voltage Rate of Change (Rated VR)
dv/dt
1,000
V/ms
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/RqJA.
THERMAL CHARACTERISTICS (Per Diode) Characteristic
Maximum Thermal Resistance, Junction−to−Case Maximum Thermal Resistance, Junction−to−Ambient
Conditions Min. Pad Min. Pad
Symbol RqJC RqJA
Max 1.3 70
Unit °C/W
ELECTRICAL CHARACTERISTICS
Characteristic
Symbol
Min
Typical
Max
Unit
Instantaneous Forward Voltage (Note 2) (iF = 20 A, Tj = 125°C) (iF = 40 A, Tj = 125°C) (iF = 20 A, Tj = 25°C) (iF = 40 A, Tj = 25°C)
Instantaneous Reverse Current (Note 2) (Rated dc Voltage, Tj = 125°C) (Rated dc Voltage, Tj = 25°C)
vF − 0.31 − 0.45 − 0.41 − 0.51
iR − 300 − 0.8
V 0.34 0.50 0.43 0.54
mA 600 10
Product parametric performance is indicated i.