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MBR4015CTLG Dataheets PDF



Part Number MBR4015CTLG
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description Switch-mode Power Rectifier
Datasheet MBR4015CTLG DatasheetMBR4015CTLG Datasheet (PDF)

MBR4015CTLG Switch-mode Power Rectifier Features and Benefits • Low Forward Voltage • Low Power Loss/High Efficiency • High Surge Capacity • 150°C Operating Junction Temperature • 40 A Total (20 A Per Diode Leg) • This Device is Pb−Free and is RoHS Compliant* Applications • Power Supply – Output Rectification • Power Management • Instrumentation Mechanical Characteristics • Case: Epoxy, Molded • Epoxy Meets UL 94, V−0 @ 0.125 in • Weight: 1.9 Grams (Approximately) • Finish: All External Surfaces.

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MBR4015CTLG Switch-mode Power Rectifier Features and Benefits • Low Forward Voltage • Low Power Loss/High Efficiency • High Surge Capacity • 150°C Operating Junction Temperature • 40 A Total (20 A Per Diode Leg) • This Device is Pb−Free and is RoHS Compliant* Applications • Power Supply – Output Rectification • Power Management • Instrumentation Mechanical Characteristics • Case: Epoxy, Molded • Epoxy Meets UL 94, V−0 @ 0.125 in • Weight: 1.9 Grams (Approximately) • Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable • Lead Temperatures for Soldering Purposes: 260°C Max. for 10 Seconds • ESD Rating: Human Body Model 3B Machine Model C www.onsemi.com SCHOTTKY BARRIER RECTIFIER 40 AMPERES, 15 VOLTS 1 2, 4 3 4 1 2 3 TO−220 STYLE 6 CASE 221A MARKING DIAGRAM AY WW B4015LG AKA *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2015 January, 2015 − Rev. 7 1 A = Assembly Location Y = Year WW = Work Week B4015L = Device Code G = Pb−Free Package AKA = Polarity Designator ORDERING INFORMATION Device MBR4015CTLG Package TO−220 (Pb−Free) Shipping 50 Units/Rail Publication Order Number: MBR4015CTL/D MBR4015CTLG MAXIMUM RATINGS Rating Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current (TC = 140°C per Diode) (TC = 140°C per Device) Peak Repetitive Forward Current, per Diode (Square Wave, 20 kHz, TC = 135°C) Non−Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions, Halfwave, Single Phase, 60 Hz) VRRM VRWM VR IF(AV) 15 20 40 V A IFRM 40 A IFSM 150 A Peak Repetitive Reverse Surge Current (2.0 ms, 1.0 kHz) IRRM 1.0 A Storage Temperature Range Tstg −65 to +175 °C Operating Junction Temperature (Note 1) TJ −65 to +150 °C Voltage Rate of Change (Rated VR) dv/dt 1,000 V/ms Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/RqJA. THERMAL CHARACTERISTICS (Per Diode) Characteristic Maximum Thermal Resistance, Junction−to−Case Maximum Thermal Resistance, Junction−to−Ambient Conditions Min. Pad Min. Pad Symbol RqJC RqJA Max 1.3 70 Unit °C/W ELECTRICAL CHARACTERISTICS Characteristic Symbol Min Typical Max Unit Instantaneous Forward Voltage (Note 2) (iF = 20 A, Tj = 125°C) (iF = 40 A, Tj = 125°C) (iF = 20 A, Tj = 25°C) (iF = 40 A, Tj = 25°C) Instantaneous Reverse Current (Note 2) (Rated dc Voltage, Tj = 125°C) (Rated dc Voltage, Tj = 25°C) vF − 0.31 − 0.45 − 0.41 − 0.51 iR − 300 − 0.8 V 0.34 0.50 0.43 0.54 mA 600 10 Product parametric performance is indicated i.


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