Document
Bridge Rectifiers, 0.5 A
MB10S
Description The MB family of bridge rectifiers is a 0.5 A rectifier family that
achieves high surge current absorption within a very small foot print. Within its small 35 mm2 form factor, the MB family shines in its surge capability. In order to absorb high surge currents, the design supports a 35 A IFSM rating and a 5.0 A2Sec I2T rating. Devices in the family are also rated to breakdown voltages of up to 1000 V. These features make the MB family ideal for small power supplies that need a little extra surge capability.
Features
Low−Leakage Surge Overload Rating: 35 A peak Ideal for Printed Circuit Board UL Certified: UL #E258596 This Device is Pb−Free and RoHS Compliant
DATA SHEET www.onsemi.com
SOIC4 W CASE 751EP
MARKING DIAGRAM
2
1
−+
$Y&Z&3 MB10S
4
3
$Y &Z &3 MB10S
= onsemi Logo = Assembly Plant Code = 3−Digit Data Code (Year & Week) = Specific Device Code
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of this data sheet.
Semiconductor Components Industries, LLC, 2010
1
February, 2024 − Rev. 3
Publication Order Number: MB10S/D
MB10S
ABSOLUTE MAXIMUM RATINGS (Values are at TA = 25C unless otherwise noted)
Symbol
Parameter
Value
Unit
VRRM
Maximum Repetitive Reverse Voltage
1000
V
VRMS VR
IF(AV)
Maximum RMS Bridge Input Voltage
DC Reverse Voltage (Rated VR) Average Rectified Forward Current at TA = 50C
On Glass−Epoxy PCB On Aluminum Substrate
700
V
1000
V
A 0.5 0.8
IFSM
Non−Repetitive Peak Forward Surge Current: 8.3 ms Single Half−Sine−Wave
35
A
TSTG
Storage Temperature Range
−55 to +150
C
TJ
Operating Junction Temperature Range
−55 to +150
_C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Symbol
Parameter
PD
Power Dissipation
RJA
Thermal Resistance, Junction to Ambient, per Leg (Note 1)
RJL
Thermal Resistance, Junction to Lead, per Leg (Note 1)
1. Device mounted on PCB with 0.5 0.5 inch (13 13 mm) lead length.
Value 1.4 85 20
Unit W C/W C/W
ELECTRICAL CHARACTERISTICS (Values are at TA = 25C unless otherwise noted)
Symbol
Parameter
Conditions
Value
Unit
VF
Maximum Forward Voltage, per Diode IF = 0.5 A
IR
Maximum Reverse Current, per Diode TA = 25C
at Rated VR
TA = 125C
I2t
I2t Rating for Fusing
t < 8.3 ms
1.0
V
5.0
mA
0.5
mA
5.0
A2s
CT
Typical Capacitance, per Diode
VR = 4.0 V, f = 1.0 MHz
13
pF
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.
ORDERING INFORMATION
Part Number
Marking
Package
Shipping†
MB10S
MB10S
SOIC4 W (Pb−Free)
3,000 / Tape & Reel
†For information on tape and r.