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MB10S Dataheets PDF



Part Number MB10S
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description Bridge Rectifiers
Datasheet MB10S DatasheetMB10S Datasheet (PDF)

Bridge Rectifiers, 0.5 A MB10S Description The MB family of bridge rectifiers is a 0.5 A rectifier family that achieves high surge current absorption within a very small foot print. Within its small 35 mm2 form factor, the MB family shines in its surge capability. In order to absorb high surge currents, the design supports a 35 A IFSM rating and a 5.0 A2Sec I2T rating. Devices in the family are also rated to breakdown voltages of up to 1000 V. These features make the MB family ideal for small po.

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Bridge Rectifiers, 0.5 A MB10S Description The MB family of bridge rectifiers is a 0.5 A rectifier family that achieves high surge current absorption within a very small foot print. Within its small 35 mm2 form factor, the MB family shines in its surge capability. In order to absorb high surge currents, the design supports a 35 A IFSM rating and a 5.0 A2Sec I2T rating. Devices in the family are also rated to breakdown voltages of up to 1000 V. These features make the MB family ideal for small power supplies that need a little extra surge capability. Features  Low−Leakage  Surge Overload Rating: 35 A peak  Ideal for Printed Circuit Board  UL Certified: UL #E258596  This Device is Pb−Free and RoHS Compliant DATA SHEET www.onsemi.com SOIC4 W CASE 751EP MARKING DIAGRAM 2 1 −+ $Y&Z&3 MB10S 4 3 $Y &Z &3 MB10S = onsemi Logo = Assembly Plant Code = 3−Digit Data Code (Year & Week) = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet.  Semiconductor Components Industries, LLC, 2010 1 February, 2024 − Rev. 3 Publication Order Number: MB10S/D MB10S ABSOLUTE MAXIMUM RATINGS (Values are at TA = 25C unless otherwise noted) Symbol Parameter Value Unit VRRM Maximum Repetitive Reverse Voltage 1000 V VRMS VR IF(AV) Maximum RMS Bridge Input Voltage DC Reverse Voltage (Rated VR) Average Rectified Forward Current at TA = 50C On Glass−Epoxy PCB On Aluminum Substrate 700 V 1000 V A 0.5 0.8 IFSM Non−Repetitive Peak Forward Surge Current: 8.3 ms Single Half−Sine−Wave 35 A TSTG Storage Temperature Range −55 to +150 C TJ Operating Junction Temperature Range −55 to +150 _C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Symbol Parameter PD Power Dissipation RJA Thermal Resistance, Junction to Ambient, per Leg (Note 1) RJL Thermal Resistance, Junction to Lead, per Leg (Note 1) 1. Device mounted on PCB with 0.5  0.5 inch (13  13 mm) lead length. Value 1.4 85 20 Unit W C/W C/W ELECTRICAL CHARACTERISTICS (Values are at TA = 25C unless otherwise noted) Symbol Parameter Conditions Value Unit VF Maximum Forward Voltage, per Diode IF = 0.5 A IR Maximum Reverse Current, per Diode TA = 25C at Rated VR TA = 125C I2t I2t Rating for Fusing t < 8.3 ms 1.0 V 5.0 mA 0.5 mA 5.0 A2s CT Typical Capacitance, per Diode VR = 4.0 V, f = 1.0 MHz 13 pF Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. ORDERING INFORMATION Part Number Marking Package Shipping† MB10S MB10S SOIC4 W (Pb−Free) 3,000 / Tape & Reel †For information on tape and r.


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