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GBU8D

ON Semiconductor

Bridge Rectifiers

GBU8A - GBU8M Bridge Rectifiers Features • Glass−Passivated Junction • Surge Overload Rating: 200 A Peak • Reliable Lo...


ON Semiconductor

GBU8D

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GBU8A - GBU8M Bridge Rectifiers Features Glass−Passivated Junction Surge Overload Rating: 200 A Peak Reliable Low−Cost Construction Utilizing Molded Plastic Technique Ideal for Printed Circuit Board UL Certified: UL #E258596 PACKAGE MARKING AND ORDERING INFORMATION Part Number Marking Package Packing Method GBU8A GBU8A GBU 4L Rail GBU8B GBU8B GBU8D GBU8D GBU8G GBU8G GBU8J GBU8J GBU8K GBU8K GBU8M GBU8M www.onsemi.com SIP4 CASE 127EL MARKING DIAGRAM RU$Y&Z&3 GBU 8A −~~ + RU $Y &Z &3 GBU8A = UL Marking = ON Semiconductor Logo = Assembly Plant Code = Numeric Date Code = Specific Device Code © Semiconductor Components Industries, LLC, 2010 April, 2019 − Rev. 2 1 Publication Order Number: GBU8B/D GBU8A − GBU8M ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Value Symbol VRRM VRMS VR IF(AV) IFSM Parameter Maximum Repetitive Reverse Voltage Maximum RMS Bridge Input Voltage DC Reverse Voltage (Rated VR) Average Rectified Forward Current TA = 100°C TA = 45°C Non−Repetitive Peak Forward Surge Current 8.3 ms Single Half−Sine−Wave 8A 8B 8D 8G 8J 8K 8M Units 50 100 200 400 600 800 1000 V 35 70 140 280 420 560 700 V 50 100 200 400 600 800 1000 V 8.0 A 6.0 A 200 A TSTG Storage Temperature Range −55 to +150 °C TJ Operating Junction Temperature −55 to +150 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not...




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