9NM65-FDS

UNISONIC TECHNOLOGIES CO., LTD 9NM65-FDS 9A, 650V N-CHANNEL SUPER-JUNCTION MOSFET  DESCRIPTION The UTC 9NM65-FDS is a Super Junction MOSFET Structure and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristics. This power MOSFET is usually used at DC-DC, AC-DC converters for power applications.  FEATURES * RDS(ON) < 0.72 Ω @ VGS = 10V, ID = 4.5A * Fast Switching Capability * Avalanche Energy Tested * Improved dv/dt Capability, High Ruggedness  SYMBOL Power MOSFET  ORDERING INFORMATION Ordering Number Lead Free Halogen Free 9NM65L-TF1-T 9NM65G-TF1-T 9NM65L-TN3-R 9NM65G-TN3-R Note: Pin Assignment: G: Gate D: Drain S: Source Package TO-220F1 TO-252 Pin Assignment 123 GDS GDS Packing Tube Tape Reel  MARKING www.unisonic.com.tw Copyright © 2017 Unisonic Technologies Co., Ltd 1 of 6 QW-R205-403.A 9NM65-FDS Power MOSFET  ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage Gate-Source Voltage VDSS VGSS 650 ±30 V V Drain Current Continuous Pulsed (Note 2) ID IDM 9 27 A A Avalanche Energy Single Pulsed (Note 3) Peak Diode Recovery dv/dt (Note 4) EAS dv/dt 324 mJ 12.7 V/ns Power Dissipation TO-220F1 TO-252 PD 44 W 62 W Junction Temperature Storage Temperature TJ TSTG +150 -55 ~ +150 °C °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be p...