5N65-CQ

UNISONIC TECHNOLOGIES CO., LTD 5N65-CQ Preliminary 5A, 650V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 5N65-CQ is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in high speed switching applications of switching power supplies and adaptors.  FEATURES * RDS(ON) < 2.2 Ω @ VGS = 10 V, ID = 2.5 A * Fast switching capability * Avalanche energy tested * Improved dv/dt capability, high ruggedness  SYMBOL Power MOSFET  ORDERING INFORMATION Ordering Number Lead Free Halogen Free Package 5N65L-TF1-T 5N65G-TF1-T TO-220F1 5N65L-TN3-R 5N65G-TN3-R TO-252 Note: Pin Assignment: G: Gate D: Drain S: Source Pin Assignment 12 3 GD S GD S Packing Tube Tape Reel  MARKING www.unisonic.com.tw Copyright © 2017 Unisonic Technologies Co., Ltd 1 of 6 QW-R205-382.a 5N65-CQ Preliminary Power MOSFET  ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 650 V Gate-Source Voltage Continuous Drain Current VGSS ID ±30 5 V A Pulsed Drain Current (Note 2) Avalanche Energy Single Pulsed (Note 3) IDM EAS 20 A 64 mJ Peak Diode Recovery dv/dt (Note 4) dv/dt 3.4 V/ns Power Dissipation TO-220F1 TO-252 PD 36 W 54 W Junction Temperature TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Notes: 1. Absolute maximum ratings are...