UT3400-H

UNISONIC TECHNOLOGIES CO., LTD UT3400-H Preliminary 5.8A, 30V N-CHANNEL ENHANCEMENT MODE POWER MOSFET „ DESCRIPTION The UTC UT3400-H is an N-ch enhancement MOSFET providing the customers with perfect RDS(ON) and low gate charge. This device can be operated with 2.5V low gate voltage. The UTC UT3400-H is optimized for applications, such as a load switch or in PWM. „ FEATURES * RDS(ON) ≤ 32mΩ @ VGS =10V, ID =5.8A RDS(ON) ≤ 35mΩ @ VGS=4.5V, ID =5A RDS(ON) ≤ 52mΩ @ VGS=2.5V, ID =4A „ SYMBOL Power MOSFET „ ORDERING INFORMATION Ordering Number Lead Free Halogen Free UT3400L-AE3-R UT3400G-AE3-R Note: Pin Assignment: G: Gate S: Source D: Drain Package SOT-23 Pin Assignment 123 GSD Packing Tape Reel „ MARKING www.unisonic.com.tw Copyright © 2015 Unisonic Technologies Co., Ltd 1 of 3 QW-R205-071.a UT3400-H Preliminary Power MOSFET „ ABSOLUTE MAXIMUM RATINGS (Ta=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS ±12 V Continuous Drain Current ID 5.3 A Pulsed Drain Current (Note 2) IDM 21.2 A Power Dissipation PD 1.56 W Junction Temperature TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Pulse width limited by TJ(MAX) 3. Pulse width ≤300μs, duty cycle≤0.5% 4. L = 50mH, IA...