N-CHANNEL MOSFET. UT3400-H Datasheet

UT3400-H MOSFET. Datasheet pdf. Equivalent

UT3400-H Datasheet
Recommendation UT3400-H Datasheet
Part UT3400-H
Description 30V N-CHANNEL MOSFET
Feature UT3400-H; UNISONIC TECHNOLOGIES CO., LTD UT3400-H Preliminary 5.8A, 30V N-CHANNEL ENHANCEMENT MODE POWER MO.
Manufacture UTC
Datasheet
Download UT3400-H Datasheet




UTC UT3400-H
UNISONIC TECHNOLOGIES CO., LTD
UT3400-H
Preliminary
5.8A, 30V N-CHANNEL
ENHANCEMENT MODE POWER
MOSFET
„ DESCRIPTION
The UTC UT3400-H is an N-ch enhancement MOSFET
providing the customers with perfect RDS(ON) and low gate charge.
This device can be operated with 2.5V low gate voltage.
The UTC UT3400-H is optimized for applications, such as a load
switch or in PWM.
„ FEATURES
* RDS(ON) 32m@ VGS =10V, ID =5.8A
RDS(ON) 35m@ VGS=4.5V, ID =5A
RDS(ON) 52m@ VGS=2.5V, ID =4A
„ SYMBOL
Power MOSFET
„ ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
UT3400L-AE3-R
UT3400G-AE3-R
Note: Pin Assignment: G: Gate S: Source D: Drain
Package
SOT-23
Pin Assignment
123
GSD
Packing
Tape Reel
„ MARKING
www.unisonic.com.tw
Copyright © 2015 Unisonic Technologies Co., Ltd
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UTC UT3400-H
UT3400-H
Preliminary
Power MOSFET
„ ABSOLUTE MAXIMUM RATINGS (Ta=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDS 30 V
Gate-Source Voltage
VGS ±12 V
Continuous Drain Current
ID 5.3 A
Pulsed Drain Current (Note 2) IDM 21.2 A
Power Dissipation
PD 1.56 W
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Pulse width limited by TJ(MAX)
3. Pulse width 300μs, duty cycle0.5%
4. L = 50mH, IAS = 2A, VDD = 50V, RG = 25, Starting TJ = 25°C
5. ISD 7A, di/dt 200A/µs, VDD BVDSS, Starting TJ = 25°C
„ THERMAL CHARACTERISTICS
PARAMETER
SYMBOL
RATINGS
Junction to Ambient (Note)
θJA 80
Note: Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
UNIT
°C/W
„ ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
BVDSS
IDSS
IGSS
VGS =0V, ID =250µA
VDS =24V,VGS =0V
VGS =±12V, VDS =0V
ON CHARACTERISTICS
Gate Threshold Voltage
On-State Drain Current
Drain to Source On-state Resistance
VGS(TH)
ID(ON)
RDS(ON)
VDS =VGS, ID =250µA
VDS =5V, VGS =4.5V
VGS =10V, ID =5.8A
VGS =4.5V, ID =5A
VGS =2.5V, ID =4 A
DYNAMIC PARAMETERS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
CISS
COSS
CRSS
RG
VDS =15V, VGS =0V, f =1MHz
VGS =0V, VDS =0V, f =1MHz
SWITCHING PARAMETERS
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-ON Delay Time
Turn-ON Rise Time
Turn-OFF Delay Time
Turn-OFF Fall-Time
QG
QGS
QGD
tD(ON)
tR
tD(OFF)
tF
VGS =4.5V, VDS =10V, ID =4A
VGS =4.5V,VDS =10V, ID=1A
RG =25
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Diode Continuous Forward Current ( Note 1)
IS
Drain-Source Diode Forward Voltage
VSD IS=1A, VGS =0V
Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Pulse width 300μs, duty cycle0.5%
MIN TYP MAX UNIT
30 V
1 µA
100 nA
0.4 0.75 0.9 V
30 A
28 32 m
30 35 m
36 52 m
695
45
36
1.5 3.0
pF
pF
pF
8.4 12 nC
1 2 nC
2.2 4 nC
4.5 9 ns
13 25 ns
27 51 ns
8.3 16 ns
5.3 A
1V
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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UTC UT3400-H
UT3400-H
Preliminary
„ TYPICAL CHARACTERISTICS
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all UTC products described or contained herein.
UTC products are not designed for use in life support appliances, devices or systems where malfunction
of these products can be reasonably expected to result in personal injury. Reproduction in whole or in
part is prohibited without the prior written consent of the copyright owner. UTC reserves the right to
make changes to information published in this document, including without limitation specifications and
product descriptions, at any time and without notice. This document supersedes and replaces all
information supplied prior to the publication hereof.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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