N-CHANNEL MOSFET
UNISONIC TECHNOLOGIES CO., LTD
6N60-CBS
Preliminary
6.0A, 600V N-CHANNEL
POWER MOSFET
DESCRIPTION
The UTC 6N60-CB...
Description
UNISONIC TECHNOLOGIES CO., LTD
6N60-CBS
Preliminary
6.0A, 600V N-CHANNEL
POWER MOSFET
DESCRIPTION
The UTC 6N60-CBS is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in switching power supplies and adaptors.
FEATURES
* RDS(ON) < 1.5Ω @ VGS = 10V, ID = 3.0A * Fast switching capability * Avalanche energy tested * Improved dv/dt capability, high ruggedness
SYMBOL
Power MOSFET
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
6N60L-TA3-T
6N60G-TA3-T
6N60L-TF1-T
6N60G-TF1-T
6N60L-TF2-T
6N60G-TF2-T
6N60L-TF3-T
6N60G-TF3-T
6N60L-TM3-R
6N60G-TM3-R
6N60L-TN3-R
6N60G-TN3-R
Note: Pin Assignment: G: Gate D: Drain S: Source
Package
TO-220 TO-220F1 TO-220F2 TO-220F
TO-251 TO-252
Pin Assignment 123 GDS GDS GDS GDS GDS GDS
Packing
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QW-R205-262 .a
6N60-CBS
MARKING
Preliminary
Power MOSFET
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 7
QW-R205-262 .a
6N60-CBS
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage Gate-Source Voltage
VDSS VGSS
600 ±30
V V
Drain Current
Continuous Pulsed (Note 2)
ID IDM
...
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