UT2311-F

UNISONIC TECHNOLOGIES CO., LTD UT2311-F -4.7A, -20V P-CHANNEL ENHANCEMENT MODE POWER MOSFET  FEATURES * Extremely low on-resistance due to high density cell * Perfect thermal performance and electrical capability with advanced technology of trench process  SYMBOL Power MOSFET  ORDERING INFORMATION Ordering Number Lead Free Halogen Free UT2311L-AE2-R UT2311G-AE2-R Note: Pin Assignment: G: Gate S: Source D: Drain Package SOT-23-3 Pin Assignment 123 GSD Packing Tape Reel  MARKING Year: K: 2016 (1H) L: 2016 (2H) M: 2017 (1H) N: 2017 (2H) Week: 01~26 (A~Z) S Lot Code www.unisonic.com.tw Copyright © 2016 Unisonic Technologies Co., Ltd 1 of 5 QW-R210-047.B UT2311-F Power MOSFET  ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise noted) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS -20 V Gate-Source Voltage VGSS ±8 V Continuous Drain Current ID -4.7 A Pulsed Drain Current IDM -18.8 A Power Dissipation (TC=25°C) (Note 2) PD 1.25 W Junction Temperature TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Surface mounted on 1 in 2 copper pad of FR4 board.  THERMAL CHARACTERISTICS PARAMETER Junction to Ambient (PCB mounted) Note: Surface Mounted on FR4 board t ≤ 5 sec. SYMBOL θJA RATINGS 80 UNIT °C/W  ELECTRICAL CHAR...