5NM60

UNISONIC TECHNOLOGIES CO., LTD 5NM60 5A, 600V N-CHANNEL SUPER-JUNCTION MOSFET  DESCRIPTION The UTC 5NM60 is a Super Junction MOSFET Structure and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristics. This power MOSFET is usually used at DC-DC, AC-DC converters for power applications.  FEATURES * RDS(on) < 1.08Ω @ VGS=10V, ID=2.5A * Improved dv/dt capability * Fast switching * 100% avalanche tested  SYMBOL Power MOSFET  ORDERING INFORMATION Ordering Number Lead Free Halogen Free 5NM60L-AA3-R 5NM60G-AA3-R 5NM60L-TF1-T 5NM60G-TF1-T 5NM60L-TM3-T 5NM60G-TM3-T 5NM60L-TN3-R 5NM60G-TN3-R Note: Pin Assignment: G: Gate D: Drain S: Source Package SOT-223 TO-220F1 TO-251 TO-252 Pin Assignment 123 GDS GDS GDS GDS Packing Tape Reel Tube Tube Tape Reel www.unisonic.com.tw Copyright © 2017 Unisonic Technologies Co., Ltd 1 of 7 QW-R205-283.D 5NM60  MARKING SOT-223 Power MOSFET TO-220F1 / TO-251 / TO-252 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 7 QW-R205-283.D 5NM60 Power MOSFET  ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 600 V Gate-Source Voltage Drain Current Continuous Pulsed (Note 2) Avalanche Current (Note 2) VGSS ID IDM IAR ±30 V 5A 20 A 1.7 A Avalanche Energy Single Pulsed (Note 3) Peak Diode Recovery dv/dt (Note 4) EAS dv/dt 87 mJ 3.7 V/ns ...