UT2308Z

UNISONIC TECHNOLOGIES CO., LTD UT2308Z 3.8A, 30V N-CHANNEL ENHANCEMENT MODE Power MOSFET  DESCRIPTION The UTC UT2308Z is N-channel Power MOSFET, designed with high density cell, with fast switching speed, ultra low on-resistance and excellent thermal and electrical capabilities. Used in commercial and industrial surface mount applications and suited for low voltage applications such as DC/DC converters.  SYMBOL 3.Drain 3 2 1 SOT-23 (EIAJ SC-59) 1.Gate 2.Source  ORDERING INFORMATION Ordering Number Lead Free Halogen Free Package UT2308ZL-AE3-R UT2308ZG-AE3-R SOT-23 Note: Pin Assignment: G: Gate S: Source D: Drain Pin Assignment 123 GSD Packing Tape Reel  MARKING www.unisonic.com.tw Copyright © 2018 Unisonic Technologies Co., Ltd 1 of 6 QW-R209-315.A UT2308Z Power MOSFET  ABSOLUTE MAXIMUM RATINGS (TA = 25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 30 V Gate-Source Voltage Continuous Drain Current VGSS ±12 V ID 3.8 A Power Dissipation PD 1.4 W Junction Temperature TJ -55 ~ +150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating: Pulse width limited by maximum junction temperature  ELECTRICAL CHARACTERISTICS (TA =25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS OFF CHARACTERISTICS Drain-Source Bre...