10N60-HC

UNISONIC TECHNOLOGIES CO., LTD 10N60-HC 10A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 10N60-HC is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits.  FEATURES * RDS(ON) < 0.7 Ω @ VGS =10V, ID = 5.0A * Fast switching * Improved dv/dt capability  SYMBOL Power MOSFET  ORDERING INFORMATION Ordering Number Lead Free Halogen-Free 10N60L-TF3-T 10N60G-TF3-T 10N60L-TF3T-T 10N60G-TF3T-T Note: Pin Assignment: G: Gate D: Drain S: Source Package TO-220F TO-220F3 Pin Assignment 123 GDS GDS Packing Tube Tube  MARKING www.unisonic.com.tw Copyright © 2018 Unisonic Technologies Co., Ltd 1 of 6 QW-R205-482.A 10N60-HC Power MOSFET  ABSOLUTE MAXIMUM RATINGS (TC = 25°С, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 600 V Gate-Source Voltage VGSS ±30 V Drain Current Continuous Pulsed (Note 2) ID IDM 10 20 A A Avalanche Energy Single Pulsed (Note 3) EAS 210 mJ Peak Diode Recovery dv/dt (Note 4) dv/dt 3.5 V/ns Power Dissipation PD 32 W Junction Temperature Storage Temperature TJ TSTG +150 -55 ~ +150 °C °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be p...