N-CHANNEL MOSFET
UNISONIC TECHNOLOGIES CO., LTD UT3400
5.8A, 30V N-CHANNEL ENHANCEMENT MODE POWER MOSFET
DESCRIPTION
The UTC UT3400 is ...
Description
UNISONIC TECHNOLOGIES CO., LTD UT3400
5.8A, 30V N-CHANNEL ENHANCEMENT MODE POWER MOSFET
DESCRIPTION
The UTC UT3400 is an N-ch enhancement MOSFET providing the customers with perfect RDS(ON) and low gate charge. This device can be operated with 2.5V low gate voltage.
The UTC UT3400 is optimized for applications, such as a load switch or in PWM.
FEATURES
* RDS(ON) ≤ 28mΩ @ VGS=10V, ID=5.8A RDS(ON) ≤ 33mΩ @ VGS=4.5V, ID=5.0A RDS(ON) ≤ 52mΩ @ VGS=2.5V, ID=4.0A
SYMBOL
Power MOSFET
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
UT3400L-AE3-R
UT3400G-AE3-R
Note: Pin Assignment: G: Gate S: Source D: Drain
Package SOT-23
Pin Assignment 123 GSD
Packing Tape Reel
MARKING
www.unisonic.com.tw Copyright © 2010 Unisonic Technologies Co., Ltd
1 of 3
QW-R502-371.A
UT3400
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDS 30 V
Gate-Source Voltage Continuous Drain Current
VGS ±12 V ID 5.8 A
Pulsed Drain Current (Note 2) Power Dissipation
IDM PD
30 A 1.4 W
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating : Pulse width limited by maximum junction temperature.
3. Pulse width ≤300μs, duty cycle≤0.5%.
THERMAL CHAR...
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