4N100-FCQ

UNISONIC TECHNOLOGIES CO., LTD 4N100-FCQ Preliminary 4A, 1000V N-CHANNEL POWER MOSFET 1  DESCRIPTION The UTC 4N100-FCQ provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.  FEATURES * RDS(ON) ≤ 6.7 Ω @ VGS=10V, ID=1.0A * Fast switching capability * Avalanche energy specified * Improved dv/dt capability, high ruggedness  SYMBOL 2.Drain TO-220F 1 1 TO-251 Power MOSFET 1 TO-220F1 TO-220F2 1 TO-252 1.Gate 3.Source  ORDERING INFORMATION Ordering Number Lead Free Halogen Free 4N100L-TF1-T 4N100G-TF1-T 4N100L-TF2-T 4N100G-TF2-T 4N100L-TF3-T 4N100G-TF3-T 4N100L-TM3-T 4N100G-TM3-T 4N100L-TN3-R 4N100G-TN3-R Note: Pin Assignment: G: Gate D: Drain S: Source Package TO-220F1 TO-220F2 TO-220F TO-251 TO-252 Pin Assignment 123 GDS GDS GDS GDS GDS Packing Tube Tube Tube Tube Tape Reel 4N100G-TF1-T (1)Packing Type (2)Package Type (3)Green Package (1) T: Tube, R: Tape Reel (2) TF3: TO-220F, TF1: TO-220F1, TF2: TO-220F2 TM3: TO-251, TN3: TO-252 (3) G: Halogen Free and Lead Free, L: Lead Free  MARKING Lot Code UTC 4 N100 1 L: Lead Free G: Halogen Free Date Code www.unisonic.com.tw Copyright © 2020 Unisonic Technologies Co., Ltd 1 of 6 QW-R205-618.b 4N100-FCQ Preliminary Power MOSFET  ABSOLUTE MAXIMUM RATINGS (TC=25°С, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Puls...