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Si5459DU
Vishay Siliconix
P-Channel 20 V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V) -20
RDS(on) () 0.052 at VGS = -4.5 V 0.082 at VGS = -2.5 V
ID (A) a -8 e
-7.5
Qg (TYP.) 8
PowerPAK® ChipFET® Single
D
S
D 6
D 7
8
5
1 3.0 mm Top View
1
S 9
4
3 D
2 D
D
G
Bottom View
1.9 mm
FEATURES
• TrenchFET® power MOSFET
• 100 % Rg tested • Material categorization:
for definitions of compliance www.vishay.com/doc?99912
please
see
APPLICATIONS • Load switch • HDD DC/DC
S
G
Ordering Information: Si5459DU-T1-GE3 (Lead (Pb)-free and halogen-free)
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TC = 25 °C
Continuous Drain Current (TJ = 150 °C)
TC = 70 °C TA = 25 °C
ID
TA = 70 °C
Pulsed Drain Current (10 μs pulse width)
IDM
Source-Drain Current Diode Current
TC = 25 °C TA = 25 °C
IS
TC = 25 °C
Maximum Power Dissipation
TC = 70 °C TA = 25 °C
PD
TA = 70 °C
Operating Junction and Storage Temperature Range Soldering Recommendations (Peak temperature) d, e
TJ, Tstg
D P-Channel MOSFET
LIMIT -20 ± 12 -8 e -8 e
-6.7 b, c -5.3 b, c
-20 -8 e -2.9 b, c 10.9
7 3.5 b, c 2.2 b, c -50 to 150
260
UNIT V
A
W °C
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
LIMIT TYPICAL MAXIMUM
UNIT
Maximum Junction-to-Ambient b, d Maximum Junction-to-Case (Drain)
t 10 s Steady State
RthJA RthJC
30 9.5
36 °C/W
11.5
Notes
a. Based on TC = 25 °C. b. Surface mounted on 1" x 1" FR4 board. c. t = 10 s. d. Maximum under steady state conditions is 72 °C/W. e. Package limited. f. See solder profile (www.vishay.com/doc?73257). The PowerPAK ChipFET is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. g. Rework conditions: Manual soldering with a soldering iron is not recommended for leadless components.
S16-0980-Rev. C, 23-May-16
1
Document Number: 65017
For technical questions, contact:
[email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com
Si5459DU
Vishay Siliconix
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Static
Drain-Source Breakdown Voltage VDS Temperature Coefficient VGS(th) Temperature Coefficient Gate Threshold Voltage Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current b
Drain-Source On-State Resistance b
Forward Transconductance b Dynamic a
VDS VDS/TJ VGS(th)/TJ VGS(th)
IGSS
IDSS
ID(on)
RDS(on)
gfs
VGS = 0 V, ID = -250 μA
ID = -250 μA
VDS = VGS, ID = -250 μA VDS = 0 V, VGS = ± 12 V VDS = -20 V, VGS = 0 V VDS = -20 V, VGS = 0 V, TJ = 55 °C VDS = -5 V, VGS = -10 V VGS = -4.5 V, ID = -6.7 A VGS = -2.5 V, ID = -1 A VDS = -10 V, ID = -6.7 A
Input Capacitance Output Capacitance Reverse Transfer Capacitance
Total Gate Charge
Ciss Coss Crss
Qg
VDS = -10 V, VGS = 0 V, f = 1 MHz VDS = -10 V, VGS = -10 V, ID = -6.7 A
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Gate Resistance
Rg
Turn-On Delay Time
td(on)
Rise Time
tr
Turn-Off Delay Time
td(off)
Fall Time
tf
Turn-On Delay Time
td(on)
Rise Time
tr
Turn-Off Delay Time
td(off)
Fall Time
tf
Drain-Source Body Diode Characteristics
VDS = -10 V, VGS = -4.5 V, ID = -6.7 A
f = 1 MHz
VDD = -10 V, RL = 1.9 ID -5.3 A, VGEN = -10 V, Rg = 1
VDD = -10 V, RL = 1.9 ID -5.3 A, VGEN = -4.5 V, Rg = 1
Continuous Source-Drain Diode Current
IS
TC = 25 °C
Pulse Diode Forward Current a
ISM
Body Diode Voltage
VSD IS = -5.3 A
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge Reverse Recovery Fall Time
Qrr ta
IF = -5.3 A, dI/dt = 100 A/μs, TJ = 25 °C
Reverse Recovery Rise Time
tb
Notes
a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width 300 μs, duty cycle 2 %.
MIN.
-20 -
-0.6 -
-20 -
1.2 -
-
-
TYP. a
-19 3.1
0.043 0.068 11
665 140 115 17
8 2 3 6 6 15 26 9 21 50 29 13
-
-0.77
30 17 16 14
MAX.
-1.4 -100 -1 -10 0.052 0.082 -
26 12 12 12 23 39 18 32 75 44 20
-8
-20 -1.2 45 26
-
UNIT V
mV/°C V nA μA A S
pF
nC
ns
A V ns nC ns
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
S16-0980-Rev. C, 23-May-16
2
Document Number: 65017
For technical questions, contact:
[email protected]
THIS.