DatasheetsPDF.com

Si5459DU Dataheets PDF



Part Number Si5459DU
Manufacturers Vishay
Logo Vishay
Description P-Channel MOSFET
Datasheet Si5459DU DatasheetSi5459DU Datasheet (PDF)

www.vishay.com Si5459DU Vishay Siliconix P-Channel 20 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) -20 RDS(on) () 0.052 at VGS = -4.5 V 0.082 at VGS = -2.5 V ID (A) a -8 e -7.5 Qg (TYP.) 8 PowerPAK® ChipFET® Single D S D 6 D 7 8 5 1 3.0 mm Top View 1 S 9 4 3 D 2 D D G Bottom View 1.9 mm FEATURES • TrenchFET® power MOSFET • 100 % Rg tested • Material categorization:  for definitions of compliance www.vishay.com/doc?99912 please see APPLICATIONS • Load switch • HDD DC/DC S.

  Si5459DU   Si5459DU


Document
www.vishay.com Si5459DU Vishay Siliconix P-Channel 20 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) -20 RDS(on) () 0.052 at VGS = -4.5 V 0.082 at VGS = -2.5 V ID (A) a -8 e -7.5 Qg (TYP.) 8 PowerPAK® ChipFET® Single D S D 6 D 7 8 5 1 3.0 mm Top View 1 S 9 4 3 D 2 D D G Bottom View 1.9 mm FEATURES • TrenchFET® power MOSFET • 100 % Rg tested • Material categorization:  for definitions of compliance www.vishay.com/doc?99912 please see APPLICATIONS • Load switch • HDD DC/DC S G Ordering Information:  Si5459DU-T1-GE3 (Lead (Pb)-free and halogen-free) ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage VDS Gate-Source Voltage VGS TC = 25 °C Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA = 25 °C ID TA = 70 °C Pulsed Drain Current (10 μs pulse width) IDM Source-Drain Current Diode Current TC = 25 °C TA = 25 °C IS TC = 25 °C Maximum Power Dissipation TC = 70 °C TA = 25 °C PD TA = 70 °C Operating Junction and Storage Temperature Range Soldering Recommendations (Peak temperature) d, e TJ, Tstg D P-Channel MOSFET LIMIT -20 ± 12 -8 e -8 e -6.7 b, c -5.3 b, c -20 -8 e -2.9 b, c 10.9 7 3.5 b, c 2.2 b, c -50 to 150 260 UNIT V A W °C THERMAL RESISTANCE RATINGS PARAMETER SYMBOL LIMIT TYPICAL MAXIMUM UNIT Maximum Junction-to-Ambient b, d Maximum Junction-to-Case (Drain) t  10 s Steady State RthJA RthJC 30 9.5 36 °C/W 11.5 Notes a. Based on TC = 25 °C. b. Surface mounted on 1" x 1" FR4 board. c. t = 10 s. d. Maximum under steady state conditions is 72 °C/W. e. Package limited. f. See solder profile (www.vishay.com/doc?73257). The PowerPAK ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. g. Rework conditions: Manual soldering with a soldering iron is not recommended for leadless components. S16-0980-Rev. C, 23-May-16 1 Document Number: 65017 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 www.vishay.com Si5459DU Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS Static Drain-Source Breakdown Voltage VDS Temperature Coefficient VGS(th) Temperature Coefficient Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current b Drain-Source On-State Resistance b Forward Transconductance b Dynamic a VDS VDS/TJ VGS(th)/TJ VGS(th) IGSS IDSS ID(on) RDS(on) gfs VGS = 0 V, ID = -250 μA ID = -250 μA VDS = VGS, ID = -250 μA VDS = 0 V, VGS = ± 12 V VDS = -20 V, VGS = 0 V VDS = -20 V, VGS = 0 V, TJ = 55 °C VDS =  -5 V, VGS = -10 V VGS = -4.5 V, ID = -6.7 A VGS = -2.5 V, ID = -1 A VDS = -10 V, ID = -6.7 A Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Ciss Coss Crss Qg VDS = -10 V, VGS = 0 V, f = 1 MHz VDS = -10 V, VGS = -10 V, ID = -6.7 A Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg Turn-On Delay Time td(on) Rise Time tr Turn-Off Delay Time td(off) Fall Time tf Turn-On Delay Time td(on) Rise Time tr Turn-Off Delay Time td(off) Fall Time tf Drain-Source Body Diode Characteristics VDS = -10 V, VGS = -4.5 V, ID = -6.7 A f = 1 MHz VDD = -10 V, RL = 1.9  ID  -5.3 A, VGEN = -10 V, Rg = 1  VDD = -10 V, RL = 1.9  ID  -5.3 A, VGEN = -4.5 V, Rg = 1  Continuous Source-Drain Diode Current IS TC = 25 °C Pulse Diode Forward Current a ISM Body Diode Voltage VSD IS = -5.3 A Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Reverse Recovery Fall Time Qrr ta IF = -5.3 A, dI/dt = 100 A/μs, TJ = 25 °C Reverse Recovery Rise Time tb Notes a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width  300 μs, duty cycle  2 %. MIN. -20 - -0.6 - -20 - 1.2 - - - TYP. a -19 3.1 0.043 0.068 11 665 140 115 17 8 2 3 6 6 15 26 9 21 50 29 13 - -0.77 30 17 16 14 MAX. -1.4 -100 -1 -10 0.052 0.082 - 26 12 12 12 23 39 18 32 75 44 20 -8 -20 -1.2 45 26 - UNIT V mV/°C V nA μA A  S pF nC  ns A V ns nC ns Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S16-0980-Rev. C, 23-May-16 2 Document Number: 65017 For technical questions, contact: [email protected] THIS.


SQJQ142E Si5459DU OPI110


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)