Field Stop Trench IGBT
RGTH00TK65D
650V 50A Field Stop Trench IGBT
Data Sheet
VCES IC(100°C) VCE(sat) (Typ.)
PD
650V 21A 1.6V@IC=50A 72W
lF...
Description
RGTH00TK65D
650V 50A Field Stop Trench IGBT
Data Sheet
VCES IC(100°C) VCE(sat) (Typ.)
PD
650V 21A 1.6V@IC=50A 72W
lFeatures 1) Low Collector - Emitter Saturation Voltage
2) High Speed Switching
3) Low Switching Loss & Soft Switching
4) Built in Very Fast & Soft Recovery FRD (RFN - Series)
lOutline
TO-3PFM
lInner Circuit
(1)(2)(3)
(2)
*1 (1)
(3)
(1) Gate (2) Collector (3) Emitter
*1 Built in FRD
5) Pb - free Lead Plating ; RoHS Compliant
lApplications PFC
lPackaging Specifications Packaging Reel Size (mm)
Tube -
UPS Power Conditioner
Tape Width (mm) Type
Basic Ordering Unit (pcs)
450
IH
Packing Code
C11
Marking
RGTH00TK65D
lAbsolute Maximum Ratings (at TC = 25°C unless otherwise specified)
Parameter
Symbol
Value
Collector - Emitter Voltage
VCES
650
Gate - Emitter Voltage
VGES
30
Collector Current Pulsed Collector Current Diode Forward Current Diode Pulsed Forward Current Power Dissipation
TC = 25°C TC = 100°C
TC = 25°C TC = 100°C
TC = 25°C TC = 100°C
IC IC ICP*1 IF IF IFP*1 PD PD
35 21 200 34 19 200 72 36
Operating Junction Temperature
Tj -40 to +175
Storage Temperature *1 Pulse width limited by Tjmax.
Tstg -55 to +175
Unit V V A A A A A A W W °C °C
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1/11
2016.01 - Rev.A
RGTH00TK65D lThermal Resistance
Parameter
Thermal Resistance IGBT Junction - Case Thermal Resistance Diode Junction - Case
Data Sheet
Symbol
Rθ(j-c) Rθ(j-c)
Values Min. Typ. Max.
Unit
- - 2.07 °C/W
- -...
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