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RGCL60TK60 Dataheets PDF



Part Number RGCL60TK60
Manufacturers ROHM
Logo ROHM
Description Field Stop Trench IGBT
Datasheet RGCL60TK60 DatasheetRGCL60TK60 Datasheet (PDF)

RGCL60TK60 6500V 30A Field Stop Trench IGBT VCES IC(100°C) VCE(sat) (Typ.) PD 600V 18A 1.4V@IC=30A 54W lFeatures 1) Low Collector - Emitter Saturation Voltage 2) Soft Switching 3) Pb - free Lead Plating ; RoHS Compliant lOutline TO-3PFM lInner Circuit (2) (1)(2)(3) (1) Data Sheet (1) Gate (2) Collector (3) Emitter (3) lApplications Partial Switching PFC lPackaging Specifications Packaging Tube Discharge Circuit Reel Size (mm) - Brake for Inverter Tape Width (mm) Type Basic Ord.

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RGCL60TK60 6500V 30A Field Stop Trench IGBT VCES IC(100°C) VCE(sat) (Typ.) PD 600V 18A 1.4V@IC=30A 54W lFeatures 1) Low Collector - Emitter Saturation Voltage 2) Soft Switching 3) Pb - free Lead Plating ; RoHS Compliant lOutline TO-3PFM lInner Circuit (2) (1)(2)(3) (1) Data Sheet (1) Gate (2) Collector (3) Emitter (3) lApplications Partial Switching PFC lPackaging Specifications Packaging Tube Discharge Circuit Reel Size (mm) - Brake for Inverter Tape Width (mm) Type Basic Ordering Unit (pcs) 450 Packing Code C11 Marking RGCL60TK60 lAbsolute Maximum Ratings (at TC = 25°C unless otherwise specified) Parameter Symbol Value Collector - Emitter Voltage VCES 600 Gate - Emitter Voltage VGES 30 Collector Current Pulsed Collector Current Power Dissipation TC = 25°C TC = 100°C TC = 25°C TC = 100°C IC IC ICP*1 PD PD 30 18 120 54 27 Operating Junction Temperature Tj -40 to +175 Storage Temperature *1 Pulse width limited by Tjmax. Tstg -55 to +175 Unit V V A A A W W °C °C www.rohm.com © 2016 ROHM Co., Ltd. All rights reserved. 1/9 2016.01 - Rev.A RGCL60TK60 lThermal Resistance Parameter Thermal Resistance IGBT Junction - Case Data Sheet Symbol Rθ(j-c) Values Min. Typ. Max. Unit - - 2.77 °C/W lIGBT Electrical Characteristics (at Tj = 25°C unless otherwise specified) Parameter Symbol Conditions Values Min. Typ. Max. Collector - Emitter Breakdown Voltage BVCES IC = 10μA, VGE = 0V 600 - - Unit V Collector Cut - off Current ICES VCE = 600V, VGE = 0V - - 10 μA Gate - Emitter Leakage Current IGES VGE = 30V, VCE = 0V - - 200 nA Gate - Emitter Threshold Voltage Collector - Emitter Saturation Voltage VGE(th) VCE = 5V, IC = 18.9mA 4.5 5.5 6.5 IC = 30A, VGE = 15V VCE(sat) Tj = 25°C Tj = 175°C - 1.4 1.8 - 1.6 - V V www.rohm.com © 2016 ROHM Co., Ltd. All rights reserved. 2/9 2016.01 - Rev.A RGCL60TK60 Data Sheet lIGBT Electrical Characteristics (at Tj = 25°C unless otherwise specified) Parameter Symbol Conditions Values Min. Typ. Max. Input Capacitance Cies VCE = 30V - 1600 - Output Capacitance Coes VGE = 0V - 38 - Reverse Transfer Capacitance Cres f = 1MHz - 29 - Total Gate Charge Qg VCE = 300V - 68 - Gate - Emitter Charge Qge IC = 30A - 13 - Gate - Collector Charge Qgc VGE = 15V - 27 - Turn - on Delay Time Rise Time td(on) IC = 30A, VCC = 400V - 44 - tr VGE = 15V, RG = 10Ω - 27 - Turn - off Delay Time td(off) Tj = 25°C - 186 - Fall Time tf Inductive Load - 178 - Turn - on Switching Loss Eon *Eon includes diode - 0.77 - Turn - off Switching Loss Eoff reverse recovery - 1.11 - Turn - on Delay Time Rise Time td(on) IC = 30A, VCC = 400V - 40 - tr VGE = 15V, RG = 10Ω - 45 - Turn - off Delay Time td(off) Tj = 175°C - 207 - Fall Time tf Inductive Load - 272 - Turn - on Switching Loss Eon *Eon includes diode - 0.97 - Turn - off Switching Loss Eoff reverse recovery - 1.54 - IC = 120A, VCC = 480V Reverse Bias Safe Operating Area .


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