Document
RGCL60TK60
6500V 30A Field Stop Trench IGBT
VCES IC(100°C) VCE(sat) (Typ.)
PD
600V 18A 1.4V@IC=30A 54W
lFeatures 1) Low Collector - Emitter Saturation Voltage
2) Soft Switching
3) Pb - free Lead Plating ; RoHS Compliant
lOutline
TO-3PFM
lInner Circuit
(2)
(1)(2)(3)
(1)
Data Sheet
(1) Gate (2) Collector (3) Emitter
(3)
lApplications Partial Switching PFC
lPackaging Specifications Packaging
Tube
Discharge Circuit
Reel Size (mm)
-
Brake for Inverter
Tape Width (mm) Type
Basic Ordering Unit (pcs)
450
Packing Code
C11
Marking
RGCL60TK60
lAbsolute Maximum Ratings (at TC = 25°C unless otherwise specified)
Parameter
Symbol
Value
Collector - Emitter Voltage
VCES
600
Gate - Emitter Voltage
VGES
30
Collector Current Pulsed Collector Current Power Dissipation
TC = 25°C TC = 100°C
TC = 25°C TC = 100°C
IC IC ICP*1 PD PD
30 18 120 54 27
Operating Junction Temperature
Tj -40 to +175
Storage Temperature *1 Pulse width limited by Tjmax.
Tstg -55 to +175
Unit V V A A A W W °C °C
www.rohm.com © 2016 ROHM Co., Ltd. All rights reserved.
1/9
2016.01 - Rev.A
RGCL60TK60 lThermal Resistance
Parameter Thermal Resistance IGBT Junction - Case
Data Sheet
Symbol Rθ(j-c)
Values Min. Typ. Max.
Unit
- - 2.77 °C/W
lIGBT Electrical Characteristics (at Tj = 25°C unless otherwise specified)
Parameter
Symbol
Conditions
Values Min. Typ.
Max.
Collector - Emitter Breakdown Voltage
BVCES IC = 10μA, VGE = 0V
600
-
-
Unit V
Collector Cut - off Current
ICES VCE = 600V, VGE = 0V
-
- 10 μA
Gate - Emitter Leakage Current
IGES VGE = 30V, VCE = 0V
-
- 200 nA
Gate - Emitter Threshold Voltage
Collector - Emitter Saturation Voltage
VGE(th) VCE = 5V, IC = 18.9mA 4.5 5.5 6.5
IC = 30A, VGE = 15V VCE(sat) Tj = 25°C
Tj = 175°C
- 1.4 1.8 - 1.6 -
V V
www.rohm.com © 2016 ROHM Co., Ltd. All rights reserved.
2/9
2016.01 - Rev.A
RGCL60TK60
Data Sheet
lIGBT Electrical Characteristics (at Tj = 25°C unless otherwise specified)
Parameter
Symbol
Conditions
Values Min. Typ.
Max.
Input Capacitance
Cies VCE = 30V
- 1600 -
Output Capacitance
Coes VGE = 0V
- 38 -
Reverse Transfer Capacitance
Cres f = 1MHz
- 29 -
Total Gate Charge
Qg VCE = 300V
- 68 -
Gate - Emitter Charge
Qge IC = 30A
- 13 -
Gate - Collector Charge
Qgc VGE = 15V
- 27 -
Turn - on Delay Time Rise Time
td(on) IC = 30A, VCC = 400V
-
44
-
tr VGE = 15V, RG = 10Ω
-
27
-
Turn - off Delay Time
td(off) Tj = 25°C
- 186 -
Fall Time
tf Inductive Load
- 178 -
Turn - on Switching Loss
Eon *Eon includes diode
- 0.77 -
Turn - off Switching Loss
Eoff reverse recovery
- 1.11 -
Turn - on Delay Time Rise Time
td(on) IC = 30A, VCC = 400V
-
40
-
tr VGE = 15V, RG = 10Ω
-
45
-
Turn - off Delay Time
td(off) Tj = 175°C
- 207 -
Fall Time
tf Inductive Load
- 272 -
Turn - on Switching Loss
Eon *Eon includes diode
- 0.97 -
Turn - off Switching Loss
Eoff reverse recovery
- 1.54 -
IC = 120A, VCC = 480V
Reverse Bias Safe Operating Area .