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RGCL60TK60D Dataheets PDF



Part Number RGCL60TK60D
Manufacturers ROHM
Logo ROHM
Description Field Stop Trench IGBT
Datasheet RGCL60TK60D DatasheetRGCL60TK60D Datasheet (PDF)

RGCL60TK60D 6500V 30A Field Stop Trench IGBT Data Sheet VCES IC(100°C) VCE(sat) (Typ.) PD 600V 18A 1.4V@IC=30A 54W lFeatures 1) Low Collector - Emitter Saturation Voltage 2) Soft Switching 3) Built in Very Fast & Soft Recovery FRD (RFN - Series) 4) Pb - free Lead Plating ; RoHS Compliant lOutline TO-3PFM lInner Circuit (1)(2)(3) (2) *1 (1) (3) (1) Gate (2) Collector (3) Emitter *1 Built in FRD lApplications Partial Switching PFC lPackaging Specifications Packaging Reel Size (mm) T.

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RGCL60TK60D 6500V 30A Field Stop Trench IGBT Data Sheet VCES IC(100°C) VCE(sat) (Typ.) PD 600V 18A 1.4V@IC=30A 54W lFeatures 1) Low Collector - Emitter Saturation Voltage 2) Soft Switching 3) Built in Very Fast & Soft Recovery FRD (RFN - Series) 4) Pb - free Lead Plating ; RoHS Compliant lOutline TO-3PFM lInner Circuit (1)(2)(3) (2) *1 (1) (3) (1) Gate (2) Collector (3) Emitter *1 Built in FRD lApplications Partial Switching PFC lPackaging Specifications Packaging Reel Size (mm) Tube - Discharge Circuit Brake for Inverter Tape Width (mm) Type Basic Ordering Unit (pcs) 450 Packing Code C11 Marking RGCL60TK60D lAbsolute Maximum Ratings (at TC = 25°C unless otherwise specified) Parameter Symbol Value Collector - Emitter Voltage VCES 600 Gate - Emitter Voltage VGES 30 Collector Current Pulsed Collector Current Diode Forward Current Diode Pulsed Forward Current Power Dissipation TC = 25°C TC = 100°C TC = 25°C TC = 100°C TC = 25°C TC = 100°C IC IC ICP*1 IF IF IFP*1 PD PD 30 18 120 26 15 100 54 27 Operating Junction Temperature Tj -40 to +175 Storage Temperature *1 Pulse width limited by Tjmax. Tstg -55 to +175 Unit V V A A A A A A W W °C °C www.rohm.com © 2016 ROHM Co., Ltd. All rights reserved. 1/11 2016.01 - Rev.A RGCL60TK60D lThermal Resistance Parameter Thermal Resistance IGBT Junction - Case Thermal Resistance Diode Junction - Case Data Sheet Symbol Rθ(j-c) Rθ(j-c) Values Min. Typ. Max. Unit - - 2.77 °C/W - - 3.93 °C/W lIGBT Electrical Characteristics (at Tj = 25°C unless otherwise specified) Parameter Symbol Conditions Values Min. Typ. Max. Collector - Emitter Breakdown Voltage BVCES IC = 10μA, VGE = 0V 600 - - Unit V Collector Cut - off Current ICES VCE = 600V, VGE = 0V - - 10 μA Gate - Emitter Leakage Current IGES VGE = 30V, VCE = 0V - - 200 nA Gate - Emitter Threshold Voltage Collector - Emitter Saturation Voltage VGE(th) VCE = 5V, IC = 18.9mA 4.5 5.5 6.5 IC = 30A, VGE = 15V VCE(sat) Tj = 25°C Tj = 175°C - 1.4 1.8 - 1.6 - V V www.rohm.com © 2016 ROHM Co., Ltd. All rights reserved. 2/11 2016.01 - Rev.A RGCL60TK60D Data Sheet lIGBT Electrical Characteristics (at Tj = 25°C unless otherwise specified) Parameter Symbol Conditions Values Min. Typ. Max. Input Capacitance Cies VCE = 30V - 1600 - Output Capacitance Coes VGE = 0V - 38 - Reverse Transfer Capacitance Cres f = 1MHz - 29 - Total Gate Charge Qg VCE = 300V - 68 - Gate - Emitter Charge Qge IC = 30A - 13 - Gate - Collector Charge Qgc VGE = 15V - 27 - Turn - on Delay Time Rise Time td(on) IC = 30A, VCC = 400V - 44 - tr VGE = 15V, RG = 10Ω - 27 - Turn - off Delay Time td(off) Tj = 25°C - 186 - Fall Time tf Inductive Load - 178 - Turn - on Switching Loss Eon *Eon includes diode - 0.77 - Turn - off Switching Loss Eoff reverse recovery - 1.11 - Turn - on Delay Time Rise Time td(on) IC = 30A, VCC = 400V - 40 - tr VGE = 15V, RG = 10Ω - 45 - Turn - off Delay Time td(off) Tj = 175°C - 207 - Fall Time tf Inductive Load - 272 - Turn - on Switching Loss Eon *Eon includes diode - 0.97 - Turn - off Switching Loss Eoff reverse recovery - 1.54 - IC = 120A, VCC = 480V Reverse Bias Safe Operating Area RBSOA VP = 600V, VGE = 15V RG = 60Ω, Tj = 175°C FULL SQUARE Unit pF nC ns mJ ns mJ - www.rohm.com © 2016 ROHM Co., Ltd. All rights reserved. 3/11 2016.01 - Rev.A RGCL60TK60D Data Sheet lFRD Electrical Characteristics (at Tj = 25°C unless otherwise specified) Parameter Symbol Conditions Min. Values Typ. Max. IF = 20A Diode Forward Voltage VF Tj = 25°C - 1.45 1.9 Tj = 175°C - 1.25 - Unit V Diode Reverse Recovery Time trr - 58 - ns Diode Peak Reverse Recovery Current Diode Reverse Recovery Charge IF = 20A Irr VCC = 400V diF/dt = 200A/μs Qrr Tj = 25°C - 6.3 - A - 0.20 - μC Diode Reverse Recovery Energy Err - 7.4 - μJ Diode Reverse Recovery Time trr Diode Peak Reverse Recovery Current Diode Reverse Recovery Charge IF = 20A Irr VCC = 400V diF/dt = 200A/μs Qrr Tj = 175°C Diode Reverse Recovery Energy Err - 256 - ns - 10.4 - A - 1.35 - μC - 146.5 - μJ www.rohm.com © 2016 ROHM Co., Ltd. All rights reserved. 4/11 2016.01 - Rev.A RGCL60TK60D lElectrical Characteristic Curves Data Sheet Collector Current : IC [A] Power Dissipation : PD [W] Fig.1 Power Dissipation vs. Case Temperature 80 Fig.2 Collector Current vs. Case Temperature 40 60 30 40 20 20 0 0 25 50 75 100 125 150 175 Case Temperature : TC [ºC]  10 Tj≦175ºC VGE≧15V 0 0 25 50 75 100 125 150 175 Case Temperature : TC [ºC] Collector Current : IC [A] Fig.3 Forward Bias Safe Operating Area 1000 100 10µs 10 1 100µs 0.1 0.01 1 TC= 25ºC Single Pulse 10 100 1000 Collector To Emitter Voltage : VCE[V] Collector Current : IC [A] Fig.4 Reverse Bias Safe Operating Area 160 140 120 100 80 60 40 20 Tj≦175ºC VGE=15V 0 0 200 400 600 800 Collector To Emitter Voltage.


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