Document
RGCL60TK60D
6500V 30A Field Stop Trench IGBT
Data Sheet
VCES IC(100°C) VCE(sat) (Typ.)
PD
600V 18A 1.4V@IC=30A 54W
lFeatures 1) Low Collector - Emitter Saturation Voltage
2) Soft Switching
3) Built in Very Fast & Soft Recovery FRD (RFN - Series)
4) Pb - free Lead Plating ; RoHS Compliant
lOutline
TO-3PFM
lInner Circuit
(1)(2)(3)
(2)
*1 (1)
(3)
(1) Gate (2) Collector (3) Emitter
*1 Built in FRD
lApplications Partial Switching PFC
lPackaging Specifications Packaging Reel Size (mm)
Tube -
Discharge Circuit Brake for Inverter
Tape Width (mm) Type
Basic Ordering Unit (pcs)
450
Packing Code
C11
Marking
RGCL60TK60D
lAbsolute Maximum Ratings (at TC = 25°C unless otherwise specified)
Parameter
Symbol
Value
Collector - Emitter Voltage
VCES
600
Gate - Emitter Voltage
VGES
30
Collector Current Pulsed Collector Current Diode Forward Current Diode Pulsed Forward Current Power Dissipation
TC = 25°C TC = 100°C
TC = 25°C TC = 100°C
TC = 25°C TC = 100°C
IC IC ICP*1 IF IF IFP*1 PD PD
30 18 120 26 15 100 54 27
Operating Junction Temperature
Tj -40 to +175
Storage Temperature *1 Pulse width limited by Tjmax.
Tstg -55 to +175
Unit V V A A A A A A W W °C °C
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1/11
2016.01 - Rev.A
RGCL60TK60D lThermal Resistance
Parameter
Thermal Resistance IGBT Junction - Case Thermal Resistance Diode Junction - Case
Data Sheet
Symbol
Rθ(j-c) Rθ(j-c)
Values Min. Typ. Max.
Unit
- - 2.77 °C/W
- - 3.93 °C/W
lIGBT Electrical Characteristics (at Tj = 25°C unless otherwise specified)
Parameter
Symbol
Conditions
Values Min. Typ.
Max.
Collector - Emitter Breakdown Voltage
BVCES IC = 10μA, VGE = 0V
600
-
-
Unit V
Collector Cut - off Current
ICES VCE = 600V, VGE = 0V
-
- 10 μA
Gate - Emitter Leakage Current
IGES VGE = 30V, VCE = 0V
-
- 200 nA
Gate - Emitter Threshold Voltage
Collector - Emitter Saturation Voltage
VGE(th) VCE = 5V, IC = 18.9mA 4.5 5.5 6.5
IC = 30A, VGE = 15V VCE(sat) Tj = 25°C
Tj = 175°C
- 1.4 1.8 - 1.6 -
V V
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2/11
2016.01 - Rev.A
RGCL60TK60D
Data Sheet
lIGBT Electrical Characteristics (at Tj = 25°C unless otherwise specified)
Parameter
Symbol
Conditions
Values Min. Typ.
Max.
Input Capacitance
Cies VCE = 30V
- 1600 -
Output Capacitance
Coes VGE = 0V
- 38 -
Reverse Transfer Capacitance
Cres f = 1MHz
- 29 -
Total Gate Charge
Qg VCE = 300V
- 68 -
Gate - Emitter Charge
Qge IC = 30A
- 13 -
Gate - Collector Charge
Qgc VGE = 15V
- 27 -
Turn - on Delay Time Rise Time
td(on) IC = 30A, VCC = 400V
-
44
-
tr VGE = 15V, RG = 10Ω
-
27
-
Turn - off Delay Time
td(off) Tj = 25°C
- 186 -
Fall Time
tf Inductive Load
- 178 -
Turn - on Switching Loss
Eon *Eon includes diode
- 0.77 -
Turn - off Switching Loss
Eoff reverse recovery
- 1.11 -
Turn - on Delay Time Rise Time
td(on) IC = 30A, VCC = 400V
-
40
-
tr VGE = 15V, RG = 10Ω
-
45
-
Turn - off Delay Time
td(off) Tj = 175°C
- 207 -
Fall Time
tf Inductive Load
- 272 -
Turn - on Switching Loss
Eon *Eon includes diode
- 0.97 -
Turn - off Switching Loss
Eoff reverse recovery
- 1.54 -
IC = 120A, VCC = 480V
Reverse Bias Safe Operating Area RBSOA VP = 600V, VGE = 15V RG = 60Ω, Tj = 175°C
FULL SQUARE
Unit pF nC
ns mJ ns mJ -
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3/11
2016.01 - Rev.A
RGCL60TK60D
Data Sheet
lFRD Electrical Characteristics (at Tj = 25°C unless otherwise specified)
Parameter
Symbol
Conditions
Min.
Values Typ.
Max.
IF = 20A
Diode Forward Voltage
VF Tj = 25°C
- 1.45 1.9
Tj = 175°C
- 1.25 -
Unit V
Diode Reverse Recovery Time
trr
- 58 - ns
Diode Peak Reverse Recovery Current
Diode Reverse Recovery Charge
IF = 20A Irr
VCC = 400V diF/dt = 200A/μs Qrr Tj = 25°C
- 6.3 -
A
- 0.20 -
μC
Diode Reverse Recovery Energy Err
- 7.4 - μJ
Diode Reverse Recovery Time
trr
Diode Peak Reverse Recovery Current
Diode Reverse Recovery Charge
IF = 20A Irr
VCC = 400V diF/dt = 200A/μs Qrr Tj = 175°C
Diode Reverse Recovery Energy Err
- 256 -
ns
- 10.4 -
A
- 1.35 -
μC
- 146.5 -
μJ
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4/11
2016.01 - Rev.A
RGCL60TK60D lElectrical Characteristic Curves
Data Sheet
Collector Current : IC [A]
Power Dissipation : PD [W]
Fig.1 Power Dissipation vs. Case Temperature
80
Fig.2 Collector Current vs. Case Temperature
40
60 30
40 20
20
0 0 25 50 75 100 125 150 175 Case Temperature : TC [ºC]
10
Tj≦175ºC VGE≧15V
0
0 25 50
75 100 125 150 175
Case Temperature : TC [ºC]
Collector Current : IC [A]
Fig.3 Forward Bias Safe Operating Area
1000
100 10µs
10
1 100µs
0.1
0.01 1
TC= 25ºC Single Pulse
10
100 1000
Collector To Emitter Voltage : VCE[V]
Collector Current : IC [A]
Fig.4 Reverse Bias Safe Operating Area
160
140
120
100
80
60
40 20 Tj≦175ºC
VGE=15V 0
0 200 400 600 800
Collector To Emitter Voltage.