RGTH80TK65D

RGTH80TK65D 650V 40A Field Stop Trench IGBT Data Sheet VCES IC(100°C) VCE(sat) (Typ.) PD 650V 19A 1.6V@IC=40A 66W lFeatures 1) Low Collector - Emitter Saturation Voltage 2) High Speed Switching 3) Low Switching Loss & Soft Switching 4) Built in Very Fast & Soft Recovery FRD (RFN - Series) lOutline TO-3PFM lInner Circuit (1)(2)(3) (2) *1 (1) (3) (1) Gate (2) Collector (3) Emitter *1 Built in FRD 5) Pb - free Lead Plating ; RoHS Compliant lApplications PFC lPackaging Specifications Packaging Reel Size (mm) Tube - UPS Power Conditioner Tape Width (mm) Type Basic Ordering Unit (pcs) 450 IH Packing Code C11 Marking RGTH80TK65D lAbsolute Maximum Ratings (at TC = 25°C unless otherwise specified) Parameter Symbol Value Collector - Emitter Voltage VCES 650 Gate - Emitter Voltage VGES 30 Collector Current Pulsed Collector Current Diode Forward Current Diode Pulsed Forward Current Power Dissipation TC = 25°C TC = 100°C TC = 25°C TC = 100°C TC = 25°C TC = 100°C IC IC ICP*1 IF IF IFP*1 PD PD 31 19 160 28 16 160 66 33 Operating Junction Temperature Tj -40 to +175 Storage Temperature *1 Pulse width limited by Tjmax. Tstg -55 to +175 Unit V V A A A A A A W W °C °C www.rohm.com © 2016 ROHM Co., Ltd. All rights reserved. 1/11 2016.01 - Rev.A RGTH80TK65D lThermal Resistance Parameter Thermal Resistance IGBT Junction - Case Thermal Resistance Diode Junction - Case Data Sheet Symbol Rθ(j-c) Rθ(j-c) Values Min. Typ. Max. Unit - - 2.27 °C/W - -...