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SP8M41FRA Dataheets PDF



Part Number SP8M41FRA
Manufacturers ROHM
Logo ROHM
Description Power MOSFET
Datasheet SP8M41FRA DatasheetSP8M41FRA Datasheet (PDF)

SP8M41FRA   80V Nch+Pch Power MOSFET Symbol VDSS RDS(on)(Max.) ID PD Tr1:Nch Tr2:Pch 80V -80V 130mΩ 240mΩ ±3.4A ±2.6A 2.0W lFeatures 1) Low on - resistance 2) Small Surface Mount Package (SOP8) 3) Pb-free lead plating ; RoHS compliant 4) AEC-Q101 Qualified lOutline SOP8            lInner circuit    Datasheet   lPackaging specifications Packing Embossed Tape lApplication Reel size (mm) 330 Switching Type Tape width (mm) Basic ordering unit (pcs) 12 2500 Taping code TB Marking SP8.

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SP8M41FRA   80V Nch+Pch Power MOSFET Symbol VDSS RDS(on)(Max.) ID PD Tr1:Nch Tr2:Pch 80V -80V 130mΩ 240mΩ ±3.4A ±2.6A 2.0W lFeatures 1) Low on - resistance 2) Small Surface Mount Package (SOP8) 3) Pb-free lead plating ; RoHS compliant 4) AEC-Q101 Qualified lOutline SOP8            lInner circuit    Datasheet   lPackaging specifications Packing Embossed Tape lApplication Reel size (mm) 330 Switching Type Tape width (mm) Basic ordering unit (pcs) 12 2500 Taping code TB Marking SP8M41 lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified) Parameter Symbol Value Tr1:Nch Tr2:Pch Unit Drain - Source voltage Continuous drain current Pulsed drain current Gate - Source voltage Power dissipation total Junction temperature Operating junction and storage temperature range VDSS 80 -80 V ID ±3.4 ±2.6 A IDP*1 ±13.6 ±10.4 A VGSS ±20 ±20 V PD*2 2.0 W PD*3 1.4 Tj 150 ℃ Tstg -55 to +150 ℃                                                                                          www.rohm.com © 2016 ROHM Co., Ltd. All rights reserved. 1/19 20161202 - Rev.001     SP8M41FRA            lThermal resistance Parameter Thermal resistance, junction - ambient total                 Datasheet                      Symbol RthJA*2 RthJA*3 Values Min. Typ. Max. - - 62.5 - - 89.2 Unit ℃/W lElectrical characteristics (Ta = 25°C) Parameter Symbol Type Conditions Drain - Source breakdown voltage Breakdown voltage temperature coefficient Tr1 V(BR)DSS Tr2  ΔV(BR)DSS  Tr1    ΔTj     Tr2 VGS = 0V, ID = 1mA VGS = 0V, ID = -1mA ID = 1mA, referenced to 25℃ ID = -1mA, referenced to 25℃ Zero gate voltage drain current IDSS Tr1 VDS = 80V, VGS = 0V Tr2 VDS = -80V, VGS = 0V Gate - Source leakage current IGSS Tr1 VDS = 0V, VGS = ±20V Tr2 VDS = 0V, VGS = ±20V Gate threshold voltage Gate threshold voltage temperature coefficient VGS(th) Tr1 Tr2  ΔVGS(th)   Tr1    ΔTj     Tr2 VDS = 10V, ID = 1mA VDS = -10V, ID = -1mA ID = 1mA, referenced to 25℃ ID = -1mA, referenced to 25℃ VGS = 10V, ID = 3.4A Tr1 VGS = 4.5V, ID = 3.4A Static drain - source on - state resistance RDS(on)*4 VGS = 4.0V, ID = 3.4A VGS = -10V, ID = -2.6A Tr2 VGS = -4.5V, ID = -1.3A VGS = -4.0V, ID = -1.3A Gate resistance Tr1 RG f=1MHz, open drain Tr2 Forward Transfer Admittance |Yfs|*4 Tr1 VDS = 10V, ID = 3.4A Tr2 VDS = -10V, ID = -2.6A *1 Pw ≦ 10μs, Duty cycle ≦ 1% *2 Mounted on a ceramic board (30×30×0.8mm) *3 Mounted on a FR4 (25×25×0.8mm) *4 Pulsed Values Unit Min. Typ. Max. 80 - V -80 - - - 81.3 mV/℃ - -73.8 - - -1 μA - - -1 - - ±10 μA - - ±10 1.0 - 2.5 V -1.0 - -2.5 - -4.4 mV/℃ - 3.1 - - 90 130 - 110 150 - 120 160 mΩ - 165 240 - 220 300 - 230 310 - 5.0 - 8.9 - Ω 3.0 - S 2.0 - -                                                                                                 www.rohm.com © 2016 ROHM Co., Ltd. All rights reserved. 2/19 20161202 - Rev.001 SP8M41FRA            lElectrical characteristics (Ta = 25°C) Parameter Symbol Conditions Input capacitance Output capacitance Reverse transfer capacitance Turn - on delay time Rise time Turn - off delay time Fall time Ciss Coss Crss td(on)*4 tr*4 td(off)*4 tf*4 VGS = 0V VDS = 10V f = 1MHz VDD ⋍ 40V, VGS = 10V ID = 1.7A RL = 24Ω RG = 10Ω Parameter Symbol Conditions Input capacitance Output capacitance Reverse transfer capacitance Turn - on delay time Rise time Turn - off delay time Fall time Ciss Coss Crss td(on)*4 tr*4 td(off)*4 tf*4 VGS = 0V VDS = -10V f = 1MHz VDD ⋍ -40V, VGS = -10V ID = -1.3A RL = 31Ω RG = 10Ω                 Datasheet Values Unit Min. Typ. Max. - 600 - - 100 - pF - 40 - - 12 - - 15 ns - 40 - - 12 - Values Min. Typ. Max. - 1000 - 90 - 40 - 14 - 12 - 60 - 20 - Unit pF ns                                                                                                 www.rohm.com © 2016 ROHM Co., Ltd. All rights reserved. 3/19 20161202 - Rev.001 SP8M41FRA            lGate charge characteristics (Ta = 25°C) Parameter Symbol Conditions Total gate charge Gate - Source charge Gate - Drain charge Qg*4 Qgs*4 Qgd*4 VDD ⋍ 40V, ID = 3.4A VGS = 5.0V                 Datasheet Values Min. Typ. Max. - 6.6 9.2 - 1.8 - 2.2 - Unit nC Parameter Total gate charge Gate - Source charge Gate - Drain charge Symbol Conditions Qg*4 Qgs*4 Qgd*4 VDD ⋍ -40V, ID = -2.6A VGS = -5.0V Values Min. Typ. Max. - 8.2 11.5 - 2.5 - 2.5 - Unit nC lBody diode electrica.


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