Document
SP8M41FRA
80V Nch+Pch Power MOSFET
Symbol VDSS
RDS(on)(Max.) ID PD
Tr1:Nch Tr2:Pch 80V -80V
130mΩ 240mΩ ±3.4A ±2.6A
2.0W
lFeatures 1) Low on - resistance 2) Small Surface Mount Package (SOP8) 3) Pb-free lead plating ; RoHS compliant 4) AEC-Q101 Qualified
lOutline
SOP8
lInner circuit
Datasheet
lPackaging specifications Packing
Embossed Tape
lApplication
Reel size (mm)
330
Switching
Type Tape width (mm) Basic ordering unit (pcs)
12 2500
Taping code
TB
Marking
SP8M41
lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified)
Parameter
Symbol
Value Tr1:Nch Tr2:Pch
Unit
Drain - Source voltage Continuous drain current Pulsed drain current Gate - Source voltage
Power dissipation
total
Junction temperature Operating junction and storage temperature range
VDSS
80 -80
V
ID
±3.4 ±2.6
A
IDP*1
±13.6 ±10.4
A
VGSS
±20 ±20
V
PD*2 2.0 W
PD*3 1.4
Tj 150 ℃
Tstg
-55 to +150
℃
www.rohm.com © 2016 ROHM Co., Ltd. All rights reserved.
1/19
20161202 - Rev.001
SP8M41FRA
lThermal resistance
Parameter
Thermal resistance, junction - ambient
total
Datasheet
Symbol
RthJA*2 RthJA*3
Values Min. Typ. Max.
- - 62.5 - - 89.2
Unit ℃/W
lElectrical characteristics (Ta = 25°C)
Parameter
Symbol Type
Conditions
Drain - Source breakdown voltage
Breakdown voltage temperature coefficient
Tr1 V(BR)DSS
Tr2 ΔV(BR)DSS Tr1 ΔTj Tr2
VGS = 0V, ID = 1mA VGS = 0V, ID = -1mA
ID = 1mA, referenced to 25℃ ID = -1mA, referenced to 25℃
Zero gate voltage drain current
IDSS Tr1 VDS = 80V, VGS = 0V Tr2 VDS = -80V, VGS = 0V
Gate - Source leakage current
IGSS
Tr1 VDS = 0V, VGS = ±20V Tr2 VDS = 0V, VGS = ±20V
Gate threshold voltage
Gate threshold voltage temperature coefficient
VGS(th)
Tr1 Tr2
ΔVGS(th) Tr1 ΔTj Tr2
VDS = 10V, ID = 1mA VDS = -10V, ID = -1mA
ID = 1mA, referenced to 25℃ ID = -1mA, referenced to 25℃
VGS = 10V, ID = 3.4A
Tr1 VGS = 4.5V, ID = 3.4A
Static drain - source on - state resistance
RDS(on)*4
VGS = 4.0V, ID = 3.4A VGS = -10V, ID = -2.6A
Tr2 VGS = -4.5V, ID = -1.3A
VGS = -4.0V, ID = -1.3A
Gate resistance
Tr1
RG
f=1MHz, open drain Tr2
Forward Transfer Admittance
|Yfs|*4 Tr1 VDS = 10V, ID = 3.4A Tr2 VDS = -10V, ID = -2.6A
*1 Pw ≦ 10μs, Duty cycle ≦ 1%
*2 Mounted on a ceramic board (30×30×0.8mm)
*3 Mounted on a FR4 (25×25×0.8mm)
*4 Pulsed
Values Unit
Min. Typ. Max.
80 - V
-80 - -
- 81.3 mV/℃
- -73.8 -
- -1 μA
- - -1
- - ±10 μA
- - ±10
1.0 - 2.5 V
-1.0 - -2.5
- -4.4 mV/℃
- 3.1 -
- 90 130
- 110 150
- 120 160 mΩ
- 165 240
- 220 300
- 230 310
- 5.0 - 8.9 -
Ω
3.0 - S
2.0 - -
www.rohm.com © 2016 ROHM Co., Ltd. All rights reserved.
2/19
20161202 - Rev.001
SP8M41FRA
lElectrical characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
Input capacitance Output capacitance Reverse transfer capacitance Turn - on delay time Rise time Turn - off delay time Fall time
Ciss Coss Crss td(on)*4 tr*4 td(off)*4 tf*4
VGS = 0V VDS = 10V f = 1MHz
VDD ⋍ 40V, VGS = 10V
ID = 1.7A RL = 24Ω RG = 10Ω
Parameter
Symbol
Conditions
Input capacitance Output capacitance Reverse transfer capacitance Turn - on delay time Rise time Turn - off delay time Fall time
Ciss Coss Crss td(on)*4 tr*4 td(off)*4 tf*4
VGS = 0V VDS = -10V f = 1MHz
VDD ⋍ -40V, VGS = -10V
ID = -1.3A RL = 31Ω RG = 10Ω
Datasheet
Values Unit
Min. Typ. Max.
- 600 -
- 100 - pF
- 40 -
- 12 -
- 15 ns
- 40 -
- 12 -
Values Min. Typ. Max.
- 1000 - 90 - 40 - 14 - 12 - 60 - 20 -
Unit pF ns
www.rohm.com © 2016 ROHM Co., Ltd. All rights reserved.
3/19
20161202 - Rev.001
SP8M41FRA
lGate charge characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
Total gate charge Gate - Source charge Gate - Drain charge
Qg*4 Qgs*4 Qgd*4
VDD ⋍ 40V, ID = 3.4A VGS = 5.0V
Datasheet
Values Min. Typ. Max.
- 6.6 9.2 - 1.8 - 2.2 -
Unit nC
Parameter
Total gate charge Gate - Source charge Gate - Drain charge
Symbol
Conditions
Qg*4 Qgs*4 Qgd*4
VDD ⋍ -40V, ID = -2.6A VGS = -5.0V
Values Min. Typ. Max.
- 8.2 11.5 - 2.5 - 2.5 -
Unit nC
lBody diode electrica.