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R8003KND3 Datasheet, Equivalent, Power MOSFET.Power MOSFET Power MOSFET |
　
　
　
| Part | R8003KND3 |
|---|---|
| Description | Power MOSFET |
| Feature | R8003KND3
　　Nch 800V 3A Power MOSFET
VDSS RDS(on)(Max. ) ID PD 800V 1. 8Ω ±3A 48W lFeatures 1) Low on-resistanc e 2) Fast switching 3) Parallel use is easy 4) Pb-free plating ; RoHS complian t lPackage TO-252 　 　 　 　 　㠀€ã€€ã€€ã€€ã€€ lInner circuit 　　 D atasheet 　 lApplication Switching l Marking specification Marking R8003KND 3 lAbsolute maximum ratings (Ta = 25° C ,unless otherwise specified) Paramet er Symbol Value Unit Drain - Source voltage Continuous drain current Pulse d drain current VDSS ID*1 IDP*2 800 V ±3 A ±9 A Gate - Source voltage st atic AC(f＞1Hz) VGSS ±20 V ±30 V Avalanche curr . |
| Manufacture | ROHM |
| Datasheet |
| Part | R8003KND3 |
|---|---|
| Description | Power MOSFET |
| Feature | R8003KND3
　　Nch 800V 3A Power MOSFET
VDSS RDS(on)(Max. ) ID PD 800V 1. 8Ω ±3A 48W lFeatures 1) Low on-resistanc e 2) Fast switching 3) Parallel use is easy 4) Pb-free plating ; RoHS complian t lPackage TO-252 　 　 　 　 　㠀€ã€€ã€€ã€€ã€€ lInner circuit 　　 D atasheet 　 lApplication Switching l Marking specification Marking R8003KND 3 lAbsolute maximum ratings (Ta = 25° C ,unless otherwise specified) Paramet er Symbol Value Unit Drain - Source voltage Continuous drain current Pulse d drain current VDSS ID*1 IDP*2 800 V ±3 A ±9 A Gate - Source voltage st atic AC(f＞1Hz) VGSS ±20 V ±30 V Avalanche curr . |
| Manufacture | ROHM |
| Datasheet |
　
　
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