SCT3017ALHR

SCT3017ALHR Automotive Grade N-channel SiC power MOSFET Datasheet VDSS RDS(on) (Typ.) ID*1 PD 650V 17mΩ 118A 427W lOutline TO-247N lInner circuit (1)(2)(3) lFeatures 1) Qualified to AEC-Q101 2) Low on-resistance 3) Fast switching speed 4) Fast reverse recovery 5) Easy to parallel 6) Simple to drive 7) Pb-free lead plating ; RoHS compliant lApplication ・Automobile ・Switch mode power supplies (1) Gate (2) Drain (3) Source *Body Diode Please note Driver Source and Power Source are not exchangeable. Their exchange might lead to malfunction. lPackaging specifications Packing Reel size (mm) Tape width (mm) Type Basic ordering unit (pcs) Taping code Marking Tube 30 C11 SCT3017AL lAbsolute maximum ratings (Ta = 25°C) Parameter Drain - Source Voltage Continuous Drain current Tc = 25°C Tc = 100°C Pulsed Drain current Gate - Source voltage (DC) Gate - Source surge voltage (tsurge < 300nsec) Recommended drive voltage Junction temperature Range of storage temperature Symbol VDSS ID *1 ID *1 ID,pulse *2 VGSS VGSS_surge*3 VGS_op*4 Tj Tstg Value 650 118 83 295 -4 to +22 -4 to +26 0 / +18 175 -55 to +175 Unit V A A A V V V °C °C www.rohm.com © 2018 ROHM Co., Ltd. All rights reserved. TSZ22111・14・001 1/12 TSQ50211-SCT3017ALHR 16.Nov.2018 - Rev.001 SCT3017ALHR Datasheet lElectrical characteristics (Ta = 25°C) Parameter Symbol Conditions Values Min. Typ. Max. Drain - Source breakdown voltage VGS = 0V, ID = 1mA V(BR)DSS Tj = 25°C Tj = -55°C 650 650 - - Zero G...