Document
MG7902WZ
600V 30A Insulated Gate Bipolar Transistor
VCES IC (Nominal) VCE(sat) (Typ.)
Max. Possible Chips per Wafer
600V 30A 1.4V 1931pcs
lFeatures 1) Trench Light Punch Through Type
2) Low Collector - Emitter Saturation Voltage
3) Soft Switching
lOutline
Wafer
lInner Circuit
(2) (1)
lApplication Partial Switching PFC Discharge Circuit Brake for Inverter
(3)
Datasheet
(1) Gate (2) Collector (3) Emitter
lAbsolute Maximum Ratings Parameter
Collector - Emitter Voltage, Tj = 25°C Gate - Emitter Voltage Collector Current Pulsed Collector Current Operating Junction Temperature *1 Depending on thermal properties of assembly *2 Pulse width limited by Tjmax.
Symbol VCES VGES IC*1 ICP*2 Tj
Value 600 ±30
*1)
120 -40 to +175
Unit V V A A °C
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1/3
2019.08 - Rev.A
MG7902WZ
Datasheet
lDesign Assurance
Parameter
Symbol
Conditions
Reverse Bias Safe Operating Area
IC = 120A, VCC = 480V, RBSOA*3 VP = 600V, VGE = 15V,
RG = 60Ω, Tj = 175℃
*3 Design assurance without measurement
Values Min. Typ. Max.
FULL SQUARE
Unit -
lElectrical Characteristics (at Tj = 25°C unless otherwise specified, in case of TO-247N package)
Parameter
Symbol
Conditions
Values Min. Typ. Max.
Unit
Collector - Emitter Breakdown Voltage
BVCES IC = 10μA, VGE = 0V
600 -
-
V
Collector Cut - off Current
ICES VCE = 600V, VGE = 0V
-
- 10 μA
Gate - Emitter Leakage Current
IGES VGE = ±30V, VCE = 0V
-
- ±200 nA
Gate - Emitter Threshold Voltage
VGE(th) VCE = 5V, IC = 18.9mA
4.5
5.5
6.5
Collector - Emitter Saturation Voltage
IC = 30A, VGE = 15V, VCE(sat)*3 Tj = 25°C
Tj = 175°C
Input Capacitance
Cies VCE = 30V,
Output Capacitance
Coes VGE = 0V,
Reverse transfer Capacitance Cres f = 1MHz
Total Gate Charge
Qg VCE = 300V,
Gate - Emitter Charge
Qge IC = 30A,
Gate - Collector Charge
Qgc VGE = 15V
*3 Design assurance without measurement
- 1.4 1.8 - 1.6 - 1600 - 38 - 29 - 68 - 13 - 27 -
V V pF nC
www.rohm.com © 2019 ROHM Co., Ltd. All rights reserved.
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2019.08 - Rev.A
1105 490 360
750 1980
MG7902WZ lChip Information
320
①②
275 1980 360 2690
2780
Datasheet
0.09±0.03 2.78
Unit:mm
2.78
Unit : μm
: Pad Area ① : Gate Bonding Pad ② : Emitter Bonding Pad Backside : Collector
Wafer Size
150mm
Wafer Thickness
0.08±0.01mm
Chip Size
2.78mm×2.78mm
Cut Line Width
0.09±0.03mm
Top Side Metallization
AlSiCu:4.4μm
Back Side Metallization Ti/Ni:0.4μm/Au:0.05μm
Passivation
Polyimide
lFurther Electrical Characteristics Switching characteristics and thermal properties are depending strongly on module design
and mounting technology and can therefore not be specified for a bare die.
This chip data sheet refers to the device data sheet
RGCL60TS60
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3/3
2019.08 - Rev.A
Notice
Precaution on using ROHM Products 1. Our Products are designed and manufactured for application in ordinary electronic equipment (such as AV equipment,
OA equipment, telecommunication equipment, home electronic appliances, amusement equipment, etc.). If you intend to use our Products in devices requiring extremely high reliability (such as medical equipment (Note 1), transport equipment, traffic equipment, aircraft/spacecraft, nuclear power controllers, fuel controllers, car equipment including car accessories, safety devices, etc.) and whose malfunction or failure may cause loss of human life, bodily injury or
serious damage to property (“Specific Applications”), please consult with the ROHM sales representative in advance. Unless otherwise agreed in writing by ROHM in advance, ROHM shall not be in any way responsible or liable for any damages, expenses or losses incurred by you or third parties arising from the use of any ROHM’s Products for Specific Applications.
(Note1) Medical Equipment Classification of the Specific Applications
JAPAN
USA
EU CHINA
CLASSⅢ CLASSⅣ
CLASSⅢ
CLASSⅡb CLASSⅢ
CLASSⅢ
2. ROHM designs and manufactures its Products subject to strict quality control system. However, semiconductor products can fail or malfunction at a certain rate. Please be sure to implement, at your own responsibilities, adequate safety measures including but not limited to fail-safe design against the physical injury, damage to any property, which a failure or malfunction of our Products may cause. The following are examples of safety measures: [a] Installation of protection circuits or other protective devices to improve system safety [b] Installation of redundant circuits to reduce the impact of single or multiple circuit failure
3. Our Products are designed and manufactured for use under standard conditions and not under any special or extraordinary environments or conditions, as exemplified below. Accordingly, ROHM shall not be in any way responsible or liable for any damages, expenses or losses arising from the use of any ROHM’s Products under any special or extraord.