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MG7902WZ Dataheets PDF



Part Number MG7902WZ
Manufacturers ROHM
Logo ROHM
Description Transistor
Datasheet MG7902WZ DatasheetMG7902WZ Datasheet (PDF)

MG7902WZ 600V 30A Insulated Gate Bipolar Transistor VCES IC (Nominal) VCE(sat) (Typ.) Max. Possible Chips per Wafer 600V 30A 1.4V 1931pcs lFeatures 1) Trench Light Punch Through Type 2) Low Collector - Emitter Saturation Voltage 3) Soft Switching lOutline Wafer lInner Circuit (2) (1) lApplication Partial Switching PFC Discharge Circuit Brake for Inverter (3) Datasheet (1) Gate (2) Collector (3) Emitter lAbsolute Maximum Ratings Parameter Collector - Emitter Voltage, Tj = 25°C Gate - Em.

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MG7902WZ 600V 30A Insulated Gate Bipolar Transistor VCES IC (Nominal) VCE(sat) (Typ.) Max. Possible Chips per Wafer 600V 30A 1.4V 1931pcs lFeatures 1) Trench Light Punch Through Type 2) Low Collector - Emitter Saturation Voltage 3) Soft Switching lOutline Wafer lInner Circuit (2) (1) lApplication Partial Switching PFC Discharge Circuit Brake for Inverter (3) Datasheet (1) Gate (2) Collector (3) Emitter lAbsolute Maximum Ratings Parameter Collector - Emitter Voltage, Tj = 25°C Gate - Emitter Voltage Collector Current Pulsed Collector Current Operating Junction Temperature *1 Depending on thermal properties of assembly *2 Pulse width limited by Tjmax. Symbol VCES VGES IC*1 ICP*2 Tj Value 600 ±30 *1) 120 -40 to +175 Unit V V A A °C www.rohm.com © 2019 ROHM Co., Ltd. All rights reserved. 1/3 2019.08 - Rev.A MG7902WZ Datasheet lDesign Assurance Parameter Symbol Conditions Reverse Bias Safe Operating Area IC = 120A, VCC = 480V, RBSOA*3 VP = 600V, VGE = 15V, RG = 60Ω, Tj = 175℃ *3 Design assurance without measurement Values Min. Typ. Max. FULL SQUARE Unit - lElectrical Characteristics (at Tj = 25°C unless otherwise specified, in case of TO-247N package) Parameter Symbol Conditions Values Min. Typ. Max. Unit Collector - Emitter Breakdown Voltage BVCES IC = 10μA, VGE = 0V 600 - - V Collector Cut - off Current ICES VCE = 600V, VGE = 0V - - 10 μA Gate - Emitter Leakage Current IGES VGE = ±30V, VCE = 0V - - ±200 nA Gate - Emitter Threshold Voltage VGE(th) VCE = 5V, IC = 18.9mA 4.5 5.5 6.5 Collector - Emitter Saturation Voltage IC = 30A, VGE = 15V, VCE(sat)*3 Tj = 25°C Tj = 175°C Input Capacitance Cies VCE = 30V, Output Capacitance Coes VGE = 0V, Reverse transfer Capacitance Cres f = 1MHz Total Gate Charge Qg VCE = 300V, Gate - Emitter Charge Qge IC = 30A, Gate - Collector Charge Qgc VGE = 15V *3 Design assurance without measurement - 1.4 1.8 - 1.6 - 1600 - 38 - 29 - 68 - 13 - 27 - V V pF nC www.rohm.com © 2019 ROHM Co., Ltd. All rights reserved. 2/3 2019.08 - Rev.A 1105 490 360 750 1980 MG7902WZ lChip Information 320 ①② 275 1980 360 2690 2780 Datasheet 0.09±0.03 2.78 Unit:mm 2.78 Unit : μm : Pad Area ① : Gate Bonding Pad ② : Emitter Bonding Pad Backside : Collector Wafer Size 150mm Wafer Thickness 0.08±0.01mm Chip Size 2.78mm×2.78mm Cut Line Width 0.09±0.03mm Top Side Metallization AlSiCu:4.4μm Back Side Metallization Ti/Ni:0.4μm/Au:0.05μm Passivation Polyimide lFurther Electrical Characteristics Switching characteristics and thermal properties are depending strongly on module design and mounting technology and can therefore not be specified for a bare die. This chip data sheet refers to the device data sheet RGCL60TS60 www.rohm.com © 2019 ROHM Co., Ltd. All rights reserved. 3/3 2019.08 - Rev.A Notice Precaution on using ROHM Products 1. Our Products are designed and manufactured for application in ordinary electronic equipment (such as AV equipment, OA equipment, telecommunication equipment, home electronic appliances, amusement equipment, etc.). If you intend to use our Products in devices requiring extremely high reliability (such as medical equipment (Note 1), transport equipment, traffic equipment, aircraft/spacecraft, nuclear power controllers, fuel controllers, car equipment including car accessories, safety devices, etc.) and whose malfunction or failure may cause loss of human life, bodily injury or serious damage to property (“Specific Applications”), please consult with the ROHM sales representative in advance. Unless otherwise agreed in writing by ROHM in advance, ROHM shall not be in any way responsible or liable for any damages, expenses or losses incurred by you or third parties arising from the use of any ROHM’s Products for Specific Applications. (Note1) Medical Equipment Classification of the Specific Applications JAPAN USA EU CHINA CLASSⅢ CLASSⅣ CLASSⅢ CLASSⅡb CLASSⅢ CLASSⅢ 2. ROHM designs and manufactures its Products subject to strict quality control system. However, semiconductor products can fail or malfunction at a certain rate. Please be sure to implement, at your own responsibilities, adequate safety measures including but not limited to fail-safe design against the physical injury, damage to any property, which a failure or malfunction of our Products may cause. The following are examples of safety measures: [a] Installation of protection circuits or other protective devices to improve system safety [b] Installation of redundant circuits to reduce the impact of single or multiple circuit failure 3. Our Products are designed and manufactured for use under standard conditions and not under any special or extraordinary environments or conditions, as exemplified below. Accordingly, ROHM shall not be in any way responsible or liable for any damages, expenses or losses arising from the use of any ROHM’s Products under any special or extraord.


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