RGS80TSX2DHR

RGS80TSX2DHR 1200V 40A Field Stop Trench IGBT Datasheet VCES IC (100°C) VCE(sat) (Typ.) PD 1200V 40A 1.7V 555W Outline TO-247N Inner Circuit (1) (2)(3) Features 1) Low Collector - Emitter Saturation Voltage 2) Short Circuit Withstand Time 10μs 3) Qualified to AEC-Q101 4) Built in Very Fast & Soft Recovery FRD 5) Pb - free Lead Plating ; RoHS Compliant Application General Inverter for Automotive and Industrial Use (2) *1 (1) (3) (1) Gate (2) Collector (3) Emitter *1 Built in FRD Packaging Specifications Packaging Reel Size (mm) Tape Width (mm) Type Basic Ordering Unit (pcs) Tube - 450 Packing Code C11 Marking RGS80TSX2D Absolute Maximum Ratings (at TC = 25°C unless otherwise specified) Parameter Symbol Value Unit Collector - Emitter Voltage Gate - Emitter Voltage Collector Current Pulsed Collector Current Diode Forward Current Diode Pulsed Forward Current Power Dissipation Operating Junction Temperature Storage Temperature *1 Pulse width limited by Tjmax. TC = 25°C TC = 100°C TC = 25°C TC = 100°C TC = 25°C TC = 100°C VCES VGES IC IC ICP*1 IF IF IFP*1 PD PD Tj Tstg 1200 ±30 80 40 120 80 40 120 555 277 -40 to +175 -55 to +175 V V A A A A A A W W °C °C www.rohm.com © 2019 ROHM Co., Ltd. All rights reserved. 1/11 2019.02 - Rev.A RGS80TSX2DHR Thermal Resistance Parameter Thermal Resistance IGBT Junction - Case Thermal Resistance Diode Junction - Case Datasheet Symbol Rθ(j-c) Rθ(j-c) Values Min. Typ. Max. - - 0.27 - - 0.56 Unit °C/W °C/W IGB...