AFM907N

NXP Semiconductors Technical Data RF Power LDMOS Transistor High Ruggedness N--Channel Enhancement--Mode Lateral MOSFET Designed for handheld two--way radio applications with frequencies from 136 to 941 MHz. The high gain, ruggedness and wideband performance of this device make it ideal for large--signal, common--source amplifier applications in handheld radio equipment. Wideband Performance (In 350–520 MHz reference circuit, 7.5 Vdc, TA = 25C, CW) Frequency (MHz) (1) Pin Gps D Pout (W) (dB) (%) (W) 350 0.25 15.2 435 0.25 15.5 520 0.25 15.0 Narrowband Performance (7.5 Vdc, TA = 25C, CW) Frequency (MHz) Gps (dB) D (%) 520 (2) 20.7 73.9 Load Mismatch/Ruggedness 56.6 61.5 64.2 8.4 8.9 7.9 Pout (W) 8.4 Frequency Signal (MHz) Type VSWR Pin (dBm) Test Voltage Result 520 (2) CW > 65:1 at all 21 Phase Angles (3 dB Overdrive) 10.8 No Device Degradation 1. Measured in 350–520 MHz UHF broadband reference circuit (page 5). 2. Measured in 520 MHz narrowband RF test fixture (page 9). Features  Characterized for operation from 136 to 941 MHz  Unmatched input and output allowing wide frequency range utilization  Integrated ESD protection  Integrated stability enhancements  Wideband — full power across the band  Exceptional thermal performance  Extreme ruggedness  High linearity for: TETRA, SSB Typical Applications  Output stage VHF band handheld radio  Output stage UHF band handheld radio  Output stage for 700–800 MHz handheld radio Document Nu...