SUG80050E

www.vishay.com SUG80050E Vishay Siliconix N-Channel 150 V (D-S) 175 °C MOSFET TO-247 Top View PRODUCT SUMMARY VDS (V) RDS(on) max. (Ω) at VGS = 10 V RDS(on) max. (Ω) at VGS = 7.5 V Qg typ. (nC) ID (A) Configuration S D G 150 0.0054 0.0060 110 100 d Single FEATURES ThunderFET® power MOSFET Low RDS - Qg figure-of-merit (FOM) Maximum 175 °C junction temperature 100 % Rg and UIS tested Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS Synchronous rectification Power supplies DC/AC inverter DC/DC converter Solar micro inverter Motor drive switch D G N-Channel MOSFET S ORDERING INFORMATION Package Lead (Pb)-free and halogen-free TO-247 SUG80050E-GE3 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-source voltage Gate-source voltage Continuous drain current Pulsed drain current (t = 100 μs) TC = 25 °C TC = 125 °C Continuous source-drain diode current Single pulse avalanche current a Single pulse avalanche energy a L = 0.1 mH Maximum power dissipation TC = 25 °C TC = 125 °C Operating junction and storage temperature range Soldering recommendations (peak temperature) c VDS VGS ID IDM IS IAS EAS PD TJ, Tstg LIMIT 150 ± 20 100 d 100 d 300 100 d 100 500 500 b 167 b -55 to +175 260 UNIT V A mJ W °C THERMAL RESISTANCE RATINGS PARAMETER Maximum junction-to-ambient (PCB mount) c Maximum junction-to-case (drain) Steady state Notes a. Duty cycle ≤ 1...