SQUN700E

www.vishay.com SQUN700E Vishay Siliconix Automotive 40 V N- and P-Channel Common Drain MOSFET Pair and 200 V N-Channel MOSFET Package Top View Package Bottom View FEATURES Optimized triple die package TrenchFET® power MOSFET 100 % Rg and UIS tested AEC-Q101 qualified Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 PRODUCT SUMMARY N-CH 2 P-CH 1 N-CH 3 VDS (V) RDS(on) (Ω) at VGS = 10 V RDS(on) (Ω) at VGS = 4.5 V ID (A) Qg typ. (nC) Configuration 40 -40 200 0.0092 0.030 0.075 0.0135 0.048 - 30 -30 16 25.5 30.2 11 N- and p-pair Package Triple die Pin 1/S1 Pin 9/D2 Pin 10/D3 Pin 2/G1 Pin 3/G2 Pin 7, 8/G3 Pin 9/D1 P-Channel MOSFET Pin 4/S2 N-Channel MOSFET Pin 5, 6/S3 N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER SYMBOL N-CH 2 Drain-source voltage VDS 40 Gate-source voltage Continuous drain current (TJ = 175 °C) Pulsed drain current (t = 300 μs) Continuous source drain current Single pulse avalanche current Single pulse avalanche energy Maximum power dissipation Operating junction and storage temperature range TC = 25 °C TC = 125 °C TC = 25 °C TC = 125 °C L = 0.1 mH TC = 25 °C TC = 125 °C VGS ID IDM IS IAS EAS PD TJ, Tstg 20 30 30 120 30 30 26.5 35 48 16 P-CH 1 -40 20 -30 -30 -120 -30 -30 -25 31 48 16 -55 to +175 N-CH 3 200 20 16 9.1 50 16 10 16 12.8 50 16 UNIT V A mJ W °C THERMAL RESISTANCE RATINGS PARAMETER SYMBOL N-CH 2 P-CH 1 N-CH 3 UNI...