IRFP360LC

IRFP360LC, SiHFP360LC Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) 400 VGS = 10 V 110 Qgs (nC) 28 Qgd (nC) 45 Configuration Single 0.20 TO-247AC D S D G G S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free SnPb FEATURES Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30 V VGS Rating Reduced Ciss, Coss, Crss Isolated Central Mounting Hole Dynamic dV/dt Rated Repetitive Avalanche Rated Compliant to RoHS Directive 2002/95/EC Available RoHS* COMPLIANT DESCRIPTION This new series of low charge Power MOSFETs achieve significantly lower gate charge over convertional MOSFETs. Utilizing advanced MOSFETs technology the device improvements allow for reduced gate drive requirements, faster switching speeds and increased total system savings. These device improvements combined with the proven ruggedness and reliability of MOSFETs offer the designer a new standard in power transistors for switching applications. The TO-247AC package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220AB devices. The TO-247AC is similar but superior to the earlier TO-218 package because of its isolated mounting hole. TO-247AC IRFP360LCPbF SiHFP360LC-E3 IRFP360LC SiHFP360LC ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Currenta Linear Derating Fact...