VSMG2000X01

End of Life April-2020 - Alternative Device: VSMY2850RGX01, VSMY2850GX01 www.vishay.com VSMG2000X01, VSMG2020X01 Vishay Semiconductors High Speed Infrared Emitting Diodes, 850 nm, GaAlAs, DH VSMG2000X01 VSMG2020X01 21725-2 DESCRIPTION VSMG2000X01 series are infrared, 850 nm emitting diodes in GaAlAs (DH) technology with high radiant power and high speed, molded in clear, untinted plastic packages (with lens) for surface mounting (SMD). FEATURES Package type: surface-mount Package form: GW, RGW Dimensions (L x W x H in mm): 2.3 x 2.3 x 2.8 AEC-Q101 qualified Peak wavelength: λp = 850 nm High reliability High radiant power High radiant intensity Angle of half intensity: ϕ = ± 12° Low forward voltage Suitable for high pulse current operation Terminal configurations: gullwing or reserve gullwing Package matches with detector VEMD2000X01 series Floor life: 4 weeks, MSL 2a, acc. J-STD-020 Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS IrDA compatible data transmission IR-illumination (CCTV) Miniature light barrier Photointerrupters Optical switch Shaft encoders IR emitter source for proximity applications PRODUCT SUMMARY COMPONENT VSMG2000X01 VSMG2020X01 Ie (mW/sr) 40 40 Note Test conditions see table “Basic Characteristics“ ϕ (deg) ± 12 ± 12 λp (nm) 850 850 tr (ns) 20 20 ORDERING INFORMATION ORDERING CODE VSMG2000X01 VSMG2020X01 Note MOQ: minimum order quantity P...