Emitting Diodes
End of Life April-2020 - Alternative Device: VSMY2850RGX01, VSMY2850GX01
www.vishay.com
VSMG2000X01, VSMG2020X01
Visha...
Description
End of Life April-2020 - Alternative Device: VSMY2850RGX01, VSMY2850GX01
www.vishay.com
VSMG2000X01, VSMG2020X01
Vishay Semiconductors
High Speed Infrared Emitting Diodes, 850 nm, GaAlAs, DH
VSMG2000X01
VSMG2020X01
21725-2
DESCRIPTION VSMG2000X01 series are infrared, 850 nm emitting diodes in GaAlAs (DH) technology with high radiant power and high speed, molded in clear, untinted plastic packages (with lens) for surface mounting (SMD).
FEATURES Package type: surface-mount Package form: GW, RGW Dimensions (L x W x H in mm): 2.3 x 2.3 x 2.8 AEC-Q101 qualified Peak wavelength: λp = 850 nm High reliability High radiant power High radiant intensity Angle of half intensity: ϕ = ± 12° Low forward voltage Suitable for high pulse current operation Terminal configurations: gullwing or reserve gullwing Package matches with detector VEMD2000X01 series Floor life: 4 weeks, MSL 2a, acc. J-STD-020 Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS IrDA compatible data transmission IR-illumination (CCTV) Miniature light barrier Photointerrupters Optical switch Shaft encoders IR emitter source for proximity applications
PRODUCT SUMMARY
COMPONENT VSMG2000X01 VSMG2020X01
Ie (mW/sr) 40 40
Note Test conditions see table “Basic Characteristics“
ϕ (deg) ± 12 ± 12
λp (nm) 850 850
tr (ns) 20 20
ORDERING INFORMATION
ORDERING CODE VSMG2000X01 VSMG2020X01
Note MOQ: minimum order quantity
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