Schottky Rectifier. VB60170G-E3 Datasheet

VB60170G-E3 Rectifier. Datasheet pdf. Equivalent

VB60170G-E3 Datasheet
Recommendation VB60170G-E3 Datasheet
Part VB60170G-E3
Description Dual High Voltage Trench MOS Barrier Schottky Rectifier
Feature VB60170G-E3; www.vishay.com VB60170G-E3 Vishay General Semiconductor Dual High Voltage Trench MOS Barrier Schot.
Manufacture Vishay
Datasheet
Download VB60170G-E3 Datasheet




Vishay VB60170G-E3
www.vishay.com
VB60170G-E3
Vishay General Semiconductor
Dual High Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.50 V at IF = 5 A
TMBS ®
D2PAK (TO-263AB)
K
2
1
VB60170G
PIN 1
K
PIN 2
HEATSINK
DESIGN SUPPORT TOOLS click logo to get started
Models
Available
PRIMARY CHARACTERISTICS
IF(AV)
VRRM
IFSM
VF at IF = 30 A
TJ max.
Package
2 x 30 A
170 V
210 A
0.72 V
175 °C
D2PAK (TO-263AB)
Circuit configuration
Common cathode
FEATURES
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Meets MSL level 1, per J-STD-020,
LF maximum peak of 245 °C
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in high frequency DC/DC converters, switching
power supplies, freewheeling diodes, OR-ing diode, and
reverse battery protection.
MECHANICAL DATA
Case: D2PAK (TO-263AB)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Terminals: matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity: as marked
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum average forward rectified current
(fig. 1)
per device
per diode
Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load
Voltage rate of change (rated VR)
Operating junction and storage temperature range
SYMBOL
VRRM
IF(AV)
IFSM
dV/dt
TJ, TSTG
VB60170G
170
60
30
210
10 000
-40 to +175
UNIT
V
A
A
V/μs
°C
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
Instantaneous forward voltage per diode
Reverse current per diode
IF = 5 A
IF = 15 A
IF = 30 A
IF = 5 A
IF = 15 A
IF = 30 A
VR = 136 V
VR = 170 V
TA = 25 °C
TA = 125 °C
TA = 25 °C
TA = 125 °C
TA = 25 °C
TA = 125 °C
VF (1)
IR (2)
Notes
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width 20 ms
TYP.
0.65
0.78
0.87
0.50
0.62
0.72
1.5
2.5
-
5
MAX.
-
-
1.02
-
-
0.80
-
-
450
50
UNIT
V
μA
mA
μA
mA
Revision: 20-Jun-2018
1 Document Number: 89950
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000



Vishay VB60170G-E3
www.vishay.com
VB60170G-E3
Vishay General Semiconductor
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Typical thermal resistance
per diode
per device
RJC
VB60170G
1.0
0.7
UNIT
°C/W
ORDERING INFORMATION (Example)
PACKAGE
PREFERRED P/N
UNIT WEIGHT (g)
TO-263AB
VB60170G-E3/4W
1.38
TO-263AB
VB60170G-E3/8W
1.38
PACKAGE CODE
4W
8W
BASE QUANTITY
50/tube
800/reel
DELIVERY MODE
Tube
Tape and reel
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
40
35
30
25
20
15
10
5
0
0
25 50 75 100 125 150 175
Case Temperature (°C)
Fig. 1 - Maximum Forward Current Derating Curve
100
TA = 175 °C
TA = 150 °C
10
TA = 125 °C
TA = 100 °C
1
TA = 25 °C
0.1
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
Instantaneous Forward Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode
30.0
25.0
20.0
D = 0.5
D = 0.3
D = 0.2
D = 0.1
D = 0.8
D = 1.0
15.0
10.0
T
5.0
0.0
0
D = tp/T
tp
5 10 15 20 25 30
Average Forward Current (A)
35
Fig. 2 - Forward Power Loss Characteristics Per Diode
100
TA = 175 °C
10 TA = 150 °C
TA = 125 °C
1
TA = 100 °C
0.1
0.01
0.001
TA = 25 °C
0.0001
20 40 60 80 100
Percent of Rated Peak Reverse Voltage (%)
Fig. 4 - Typical Reverse Characteristics Per Diode
Revision: 20-Jun-2018
2 Document Number: 89950
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000



Vishay VB60170G-E3
www.vishay.com
10 000
1000
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
100
VB60170G-E3
Vishay General Semiconductor
10
Junction to Case
1
10
0.1
1 10
Reverse Voltage (V)
100
Fig. 5 - Typical Junction Capacitance Per Diode
0.1
0.01
0.1 1 10
t - Pulse Duration (s)
100
Fig. 6 - Typical Transient Thermal Impedance Per Diode
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
D2PAK (TO-263AB)
0.411 (10.45)
0.380 (9.65)
0.245 (6.22)
MIN.
K
0.190 (4.83)
0.160 (4.06)
0.360 (9.14)
0.320 (8.13)
1K2
0.624 (15.85)
0.591 (15.00)
0.037 (0.940)
0.027 (0.686)
0.105 (2.67)
0.095 (2.41)
0.205 (5.20)
0.195 (4.95)
0.055 (1.40)
0.045 (1.14)
0.055 (1.40)
0.047 (1.19)
0 to 0.01 (0 to 0.254)
0.110 (2.79)
0.090 (2.29)
0.021 (0.53)
0.014 (0.36)
0.140 (3.56)
0.110 (2.79)
Mounting Pad Layout
0.42 (10.66) min.
0.670 (17.02)
0.591 (15.00)
0.08 (2.032) MIN.
0.105 (2.67)
0.095 (2.41)
0.33 (8.38) min.
0.15 (3.81) min.
Revision: 20-Jun-2018
3 Document Number: 89950
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000







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