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VB60170G-E3
Vishay General Semiconductor
Dual High Voltage Trench MOS Barrier Schottky Rectifier
Ultra ...
www.vishay.com
VB60170G-E3
Vishay General Semiconductor
Dual High Voltage Trench MOS Barrier
Schottky Rectifier
Ultra Low VF = 0.50 V at IF = 5 A
TMBS ®
D2PAK (TO-263AB) K
2
1 VB60170G
PIN 1
K
PIN 2
HEATSINK
DESIGN SUPPORT TOOLS click logo to get started
Models
Available
PRIMARY CHARACTERISTICS
IF(AV) VRRM IFSM VF at IF = 30 A TJ max. Package
2 x 30 A 170 V 210 A 0.72 V 175 °C
D2PAK (TO-263AB)
Circuit configuration
Common cathode
FEATURES Trench MOS
Schottky technology Low forward voltage drop, low power losses High efficiency operation Meets MSL level 1, per J-STD-020,
LF maximum peak of 245 °C Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection.
MECHANICAL DATA Case: D2PAK (TO-263AB) Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS-compliant, commercial grade Terminals: matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test Polarity: as marked Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum average forward rectified current (fig. 1)
per device per diode
Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load
Voltage rate of change (rated VR) Ope...