Power MOSFET
www.vishay.com
SiHD2N80E
Vishay Siliconix
E Series Power MOSFET
DPAK (TO-252)
D
D G
GS
S N-Channel MOSFET
PRODUCT...
Description
www.vishay.com
SiHD2N80E
Vishay Siliconix
E Series Power MOSFET
DPAK (TO-252)
D
D G
GS
S N-Channel MOSFET
PRODUCT SUMMARY
VDS (V) at TJ max. RDS(on) typ. () at 25 °C Qg max. (nC) Qgs (nC) Qgd (nC) Configuration
850 VGS = 10 V
90 11 19 Single
2.38
FEATURES Low figure-of-merit (FOM) Ron x Qg Low input capacitance (Ciss) Reduced switching and conduction losses Ultra low gate charge (Qg) Avalanche energy rated (UIS) Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS Server and telecom power supplies Switch mode power supplies (SMPS) Power factor correction power supplies (PFC) Lighting
- High-intensity discharge (HID) - Fluorescent ballast lighting Industrial - Welding - Induction heating - Motor drives - Battery chargers - Renewable energy - Solar (PV inverters)
ORDERING INFORMATION
Package Lead (Pb)-free and halogen-free
DPAK (TO-252) SiHD2N80E-GE3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-source voltage Gate-source voltage
Continuous drain current (TJ = 150 °C)
Pulsed drain current a Linear derating factor
VGS at 10 V
TC = 25 °C TC = 100 °C
VDS VGS
ID
IDM
Single pulse avalanche energy b Maximum power dissipation Operating junction and storage temperature range Drain-source voltage slope Reverse diode dV/dt d
TJ = 125 °C
EAS PD TJ, Tstg
dV/dt
Soldering recommendations (peak temperature) c
For 10 s
Notes
a. Repetitive rating; pulse widt...
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