www.vishay.com
V12PM15
Vishay General Semiconductor
High Current Density Surface-Mount TMBS® (Trench MOS Barrier Schot...
www.vishay.com
V12PM15
Vishay General Semiconductor
High Current Density Surface-Mount TMBS® (Trench MOS Barrier
Schottky) Rectifier
Ultra Low VF = 0.60 V at IF = 6 A
eSMP® Series
K
1 2
SMPC (TO-277A)
K Cathode
Anode 1 Anode 2
ADDITIONAL RESOURCES
3D 3D
3D Models
PRIMARY CHARACTERISTICS
IF(AV)
12.0 A
VRRM
150 V
IFSM VF at IF = 12.0 A (TA = 125 °C)
200 A 0.66 V
TJ max.
175 °C
Package
SMPC (TO-277A)
Circuit configuration
Single
FEATURES
Very low profile - typical height of 1.1 mm
Available
Trench MOS
Schottky technology
Low forward voltage drop, low power losses
High efficiency operation
Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C
AEC-Q101 qualified available - Automotive ordering code; base P/NHM3
Material categorization: for definitions of compliance please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in low voltage high frequency inverters, freewheeling, DC/DC converters, and polarity protection applications.
MECHANICAL DATA
Case: SMPC (TO-277A) Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS-compliant, and commercial grade Base P/NHM3 - halogen-free, RoHS-compliant, and AEC-Q101 qualified
Terminals: matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 M3 and HM3 suffix meets JESD 201 class 2 whisker test
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
V12PM15
Device marking code
12M15
Maximum repetitive peak reverse voltage...