V10K60DU

www.vishay.com V10K60DU Vishay General Semiconductor High Current Density Surface-Mount Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.39 V at IF = 2.5 A 8 7 6 5 FlatPAK 5 x 6 1 and / or 2 3 and / or 4 7, 8 5, 6 1 2 3 4 DESIGN SUPPORT TOOLS click logo to get started FEATURES Trench MOS Schottky technology Available Low forward voltage drop, low power losses High efficiency operation Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C AEC-Q101 qualified available - Automotive ordering code: base P/NHM3 Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in low voltage high frequency DC/DC converters, freewheeling diodes, and polarity protection applications. Models Available PRIMARY CHARACTERISTICS IF(AV) 2x5A VRRM IFSM VF at IF = 5 A (TA = 125 °C) 60 V 100 A 0.48 V TJ max. 150 °C Package FlatPAK 5 x 6 Circuit configuration Separated cathode MECHANICAL DATA Case: FlatPAK 5 x 6 Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS-compliant Base P/NHM3 - halogen-free, RoHS-compliant, and AEC-Q101 qualified Terminals: matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 M3 and HM3 suffix meets JESD 201 class 2 whisker test    MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL V10K60DU Device marking code V1060D Maximum repetitive peak reverse voltage Maximum DC forward current pe...