www.vishay.com
VB30100S-M3
Vishay General Semiconductor
High-Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low V...
www.vishay.com
VB30100S-M3
Vishay General Semiconductor
High-Voltage Trench MOS Barrier
Schottky Rectifier
Ultra Low VF = 0.39 V at IF = 5 A
TMBS ®
D2PAK (TO-263AB)
K
A NC VB30100S
NC K
A HEATSINK
DESIGN SUPPORT TOOLS click logo to get started
Models
Available
PRIMARY CHARACTERISTICS
IF(AV) VRRM IFSM VF at IF = 30 A TJ max. Package
30 A 100 V 250 A 0.69 V 150 °C D2PAK (TO-263AB)
Circuit configuration
Common cathode
FEATURES
Trench MOS
Schottky technology Low forward voltage drop, low power losses High efficiency operation Low thermal resistance Meets MSL level 1, per J-STD-020,
LF maximum peak of 245 °C Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in high frequency converters, switching power supplies, freewheeling diodes, OR-ing diode, DC/DC converters, and reverse battery protection.
MECHANICAL DATA Case: D2PAK (TO-263AB) Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS-compliant, and commercial grade Terminals: matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 1A whisker test Polarity: as marked Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Maximum repetitive peak reverse voltage
Maximum average forward rectified current (fig. 1)
Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load
VRRM IF(AV)
IFSM
...