www.vishay.com
VBT2080S-M3
Vishay General Semiconductor
Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.46 V at...
www.vishay.com
VBT2080S-M3
Vishay General Semiconductor
Trench MOS Barrier
Schottky Rectifier
Ultra Low VF = 0.46 V at IF = 5 A
TMBS ®
D2PAK (TO-263AB) K
A NC VBT2080S
NC K A HEATSINK
DESIGN SUPPORT TOOLS click logo to get started
FEATURES Trench MOS
Schottky technology Low forward voltage drop, low power losses High efficiency operation Meets MSL level 1, per J-STD-020, LF maximum
peak of 245 °C Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS For use in high frequency converters, switching power supplies, freewheeling diodes, OR-ing diode, DC/DC converters, and reverse battery protection.
Models
Available
PRIMARY CHARACTERISTICS
IF(AV) VRRM IFSM VF at IF = 20 A TJ max. Package
20 A 80 V 150 A 0.70 V 150 °C D2PAK (TO-263AB)
Circuit configuration
Single
MECHANICAL DATA
Case: D2PAK (TO-263AB) Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS-compliant, and commercial grade
Terminals: matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 1A whisker test
Polarity: as marked
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Maximum repetitive peak reverse voltage
Maximum average forward rectified current (fig. 1)
Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load
VRRM IF(AV)
IFSM
Operating junction and storage temperature rang...