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V6KM120DU
Vishay General Semiconductor
High Current Density Surface-Mount Trench MOS Barrier Schottky R...
www.vishay.com
V6KM120DU
Vishay General Semiconductor
High Current Density Surface-Mount Trench MOS Barrier
Schottky Rectifier
Ultra Low VF = 0.51 V at IF = 1.5 A
8 7 6 5
FlatPAK 5 x 6
1 and / or 2 3 and / or 4
7, 8 5, 6
1 2
3 4
DESIGN SUPPORT TOOLS click logo to get started
FEATURES
Trench MOS
Schottky technology
Available
Low forward voltage drop, low power losses
High efficiency operation
Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C
AEC-Q101 qualified available - Automotive ordering code: base P/NHM3
Material categorization: for definitions of compliance please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in low voltage high frequency DC/DC converters, freewheeling diodes, and polarity protection applications.
Models
Available
PRIMARY CHARACTERISTICS
IF(AV) VRRM IFSM VF at IF = 3 A (TA = 125 °C) TJ max. Package
2x3A 120 V 80 A 0.60 V 175 °C FlatPAK 5 x 6
Circuit configuration
Separated cathode
MECHANICAL DATA
Case: FlatPAK 5 x 6 Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS-compliant Base P/NHM3 - halogen-free, RoHS-compliant, and AEC-Q101 qualified
Terminals: matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 M3 and HM3 suffix meets JESD 201 class 2 whisker test
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
V6KM120DU
Device marking code
V6M12D
Maximum repetitive peak reverse voltage
Maximum DC forward current per diode
...