MRF7S24250N

NXP Semiconductors Technical Data RF Power LDMOS Transistor N--Channel Enhancement--Mode Lateral MOSFET The 250 W CW RF power transistor is designed for industrial, scientific, medical (ISM) and industrial heating applications at 2450 MHz. This device is suitable for use in CW, pulse and linear applications. This high gain, high efficiency rugged device is targeted to replace industrial magnetrons and will provide longer life and easier servicing. Typical Performance: In 2400–2500 MHz reference circuit, VDD = 32 Vdc Frequency Pin Gps D Pout (MHz) Signal Type (W) (dB) (%) (W) 2400 2450 2500 CW 9.0 14.5 55.5 255 9.0 14.7 54.8 263 9.0 14.3 55.5 242 Load Mismatch/Ruggedness Frequency (MHz) Signal Type VSWR 2450 CW > 10:1 at all Phase Angles Pin (W) 14 (3 dB Overdrive) Test Voltage Result 32 No Device Degradation Features  Characterized with series equivalent large--signal impedance parameters  Internally matched for ease of use  Qualified up to a maximum of 32 VDD operation  Integrated high performance ESD protection Typical Applications  Industrial heating and drying  Material welding  Plasma lighting  Scientific  Medical: skin treatment, blood therapy, electrosurgery Document Number: MRF7S24250N Rev. 1, 9/2016 MRF7S24250N 2450 MHz, 250 W, 32 V RF POWER LDMOS TRANSISTOR OM--780--2L PLASTIC Gate 2 1 Drain (Top View) Note: Exposed backside of the package is the source terminal for the transistor. Figure 1. Pin Connections  2016 NXP B.V. RF...