SUM70030E

www.vishay.com SUM70030E Vishay Siliconix N-Channel 100 V (D-S) MOSFET TO-263 Top View S D G PRODUCT SUMMARY VDS (V) RDS(on) max. () at VGS = 10 V RDS(on) max. () at VGS = 7.5 V Qg typ. (nC) ID (A) Configuration 100 0.00288 0.00348 142.4 150 d Single FEATURES TrenchFET® power MOSFET Maximum 175 °C junction temperature Very low Qgd reduces power loss from passing through Vplateau 100 % Rg and UIS tested Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS Power supply - Secondary synchronous rectification DC/DC converter Power tools Motor drive switch DC/AC inverter Battery management OR-ing / e-fuse D G S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free and halogen-free TO-263 SUM70030E-GE3 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-source voltage Gate-source voltage Continuous drain current (TJ = 150 °C) Pulsed drain current (t = 100 μs) Avalanche current Single avalanche energy a TC = 25 °C TC = 70 °C L = 0.1 mH VDS VGS ID IDM IAS EAS Maximum power dissipation a TC = 25 °C TC = 125 °C Operating junction and storage temperature range PD TJ, Tstg LIMIT 100 ± 20 150 d 150 d 500 60 180 375 b 125 b -55 to +175 UNIT V A mJ W °C THERMAL RESISTANCE RATINGS PARAMETER Junction-to-ambient (PCB mount) c Junction-to-case (drain) Notes a. Duty cycle  1 % b. See SOA curve for voltage derating c. When mounted on 1" square PCB (FR4 mate...