SiR800ADP

www.vishay.com SiR800ADP Vishay Siliconix N-Channel 20 V (D-S) MOSFET PowerPAK® SO-8 Single D D8 D7 D6 5 6.15 mm 1 5.15 mm Top View PRODUCT SUMMARY VDS (V) RDS(on) max. () at VGS = 10 V RDS(on) max. () at VGS = 4.5 V RDS(on) max. () at VGS = 2.5 V Qg typ. (nC) ID (A) Configuration 1 2S 3S 4S G Bottom View 20 0.00135 0.00175 0.00460 18.2 177 g Single FEATURES TrenchFET® Gen IV power MOSFET Optimized Qg, Qgd, and Qgd/Qgs ratio reduces switching related power loss 100 % Rg and UIS tested Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS Synchronous rectification High power density DC/DC Synchronous buck converter Load switching G D S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free and halogen-free PowerPAK SO-8 SiR800ADP-T1-GE3 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-source voltage Gate-source voltage TC = 25 °C Continuous drain current (TJ = 150 °C) TC = 70 °C TA = 25 °C TA = 70 °C Pulsed drain current (t = 100 μs) Continuous source-drain diode current TC = 25 °C TA = 25 °C Single pulse avalanche current Single pulse avalanche energy L = 0.1 mH TC = 25 °C Maximum power dissipation TC = 70 °C TA = 25 °C TA = 70 °C Operating junction and storage temperature range Soldering recommendations (peak temperature) c VDS VGS ID IDM IS IAS EAS PD TJ, Tstg LIMIT 20 +12 / -8 177 142 50.2 b, c 40.2 b, c 150 56.8 4.5 b, c 20 20 6...