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SiHD1K4N60E
Vishay Siliconix
E Series Power MOSFET
DPAK (TO-252) D
S G
D
G S
N-Channel MOSFET
PRODUCT SUMMARY
VDS (V) at TJ max. RDS(on) typ. () at 25 °C Qg max. (nC) Qgs (nC) Qgd (nC) Configuration
650 VGS = 10 V
7.5 1 3 Single
1.3
FEATURES • 4th generation E series technology
• Low figure-of-merit (FOM) Ron x Qg • Low effective capacitance (Co(er)) • Reduced switching and conduction losses
• Avalanche energy rated (UIS)
• Material categorization: for definitions of compliance please see www.vishay.com/doc?99912
APPLICATIONS • Server and telecom power supplies • Switch mode power supplies (SMPS) • Power factor correction power supplies (PFC) • Lighting
- High-intensity discharge (HID) - Fluorescent ballast lighting • Industrial - Welding - Induction heating - Motor drives - Battery chargers - Solar (PV inverters)
ORDERING INFORMATION
Package Lead (Pb)-free and halogen-free
DPAK (TO-252) SiHD1K4N60E-GE3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-source voltage Gate-source voltage
Continuous drain current (TJ = 150 °C)
Pulsed drain current a Linear derating factor
VGS at 10 V
TC = 25 °C TC = 100 °C
VDS VGS
ID
IDM
Single pulse avalanche energy b Maximum power dissipation Operating junction and storage temperature range Drain-source voltage slope Reverse diode dv/dt d
TJ = 125 °C
EAS PD TJ, Tstg
dv/dt
Soldering recommendations (peak temperature) c
For 10 s
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature b. VDD = 140 V, starting TJ = 25 °C, L = 28.2 mH, Rg = 25 , IAS = 1 A c. 1.6 mm from case d. ISD ID, di/dt = 100 A/μs, starting TJ = 25 °C
LIMIT 600 ± 30 4.2 2.6 5 0.5 14 63
-55 to +150 70 3 260
UNIT V
A
W/°C mJ W °C V/ns °C
S19-0021-Rev. B, 14-Jan-2019
1
Document Number: 92125
For technical questions, contact:
[email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com
SiHD1K4N60E
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
Maximum junction-to-ambient Maximum junction-to-case (drain)
RthJA RthJC
TYP. -
MAX. 62 2.0
UNIT °C/W
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Static
Drain-source breakdown voltage VDS temperature coefficient
VDS VDS/TJ
VGS = 0 V, ID = 250 μA Reference to 25 °C, ID = 1 mA
Gate-source threshold voltage (N) Gate-source leakage
VGS(th) IGSS
VDS = VGS, ID = 250 μA VGS = ± 20 V VGS = ± 30 V
Zero gate voltage drain current
Drain-source on-state resistance Forward transconductance a Dynamic
IDSS
RDS(on) gfs
VDS = 600 V, VGS = 0 V
VDS = 480 V, VGS = 0 V, TJ = 125 °C
VGS = 10 V
ID = 0.5 A
VDS = 20 V, ID = 2.0 A
Input capacitance
Output capacitance
Reverse transfer capacitance
Effective output capacitance, energy related a
Effective output capacitance, time related b
Ciss Coss Crss Co(.