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SiHD1K4N60E Dataheets PDF



Part Number SiHD1K4N60E
Manufacturers Vishay
Logo Vishay
Description Power MOSFET
Datasheet SiHD1K4N60E DatasheetSiHD1K4N60E Datasheet (PDF)

www.vishay.com SiHD1K4N60E Vishay Siliconix E Series Power MOSFET DPAK (TO-252) D S G D G S N-Channel MOSFET PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) typ. () at 25 °C Qg max. (nC) Qgs (nC) Qgd (nC) Configuration 650 VGS = 10 V 7.5 1 3 Single 1.3 FEATURES • 4th generation E series technology • Low figure-of-merit (FOM) Ron x Qg • Low effective capacitance (Co(er)) • Reduced switching and conduction losses • Avalanche energy rated (UIS) • Material categorization: for definitions of comp.

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www.vishay.com SiHD1K4N60E Vishay Siliconix E Series Power MOSFET DPAK (TO-252) D S G D G S N-Channel MOSFET PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) typ. () at 25 °C Qg max. (nC) Qgs (nC) Qgd (nC) Configuration 650 VGS = 10 V 7.5 1 3 Single 1.3 FEATURES • 4th generation E series technology • Low figure-of-merit (FOM) Ron x Qg • Low effective capacitance (Co(er)) • Reduced switching and conduction losses • Avalanche energy rated (UIS) • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • Server and telecom power supplies • Switch mode power supplies (SMPS) • Power factor correction power supplies (PFC) • Lighting - High-intensity discharge (HID) - Fluorescent ballast lighting • Industrial - Welding - Induction heating - Motor drives - Battery chargers - Solar (PV inverters) ORDERING INFORMATION Package Lead (Pb)-free and halogen-free DPAK (TO-252) SiHD1K4N60E-GE3 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-source voltage Gate-source voltage Continuous drain current (TJ = 150 °C) Pulsed drain current a Linear derating factor VGS at 10 V TC = 25 °C TC = 100 °C VDS VGS ID IDM Single pulse avalanche energy b Maximum power dissipation Operating junction and storage temperature range Drain-source voltage slope Reverse diode dv/dt d TJ = 125 °C EAS PD TJ, Tstg dv/dt Soldering recommendations (peak temperature) c For 10 s Notes a. Repetitive rating; pulse width limited by maximum junction temperature b. VDD = 140 V, starting TJ = 25 °C, L = 28.2 mH, Rg = 25 , IAS = 1 A c. 1.6 mm from case d. ISD  ID, di/dt = 100 A/μs, starting TJ = 25 °C LIMIT 600 ± 30 4.2 2.6 5 0.5 14 63 -55 to +150 70 3 260 UNIT V A W/°C mJ W °C V/ns °C S19-0021-Rev. B, 14-Jan-2019 1 Document Number: 92125 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 www.vishay.com SiHD1K4N60E Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOL Maximum junction-to-ambient Maximum junction-to-case (drain) RthJA RthJC TYP. - MAX. 62 2.0 UNIT °C/W SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS Static Drain-source breakdown voltage VDS temperature coefficient VDS VDS/TJ VGS = 0 V, ID = 250 μA Reference to 25 °C, ID = 1 mA Gate-source threshold voltage (N) Gate-source leakage VGS(th) IGSS VDS = VGS, ID = 250 μA VGS = ± 20 V VGS = ± 30 V Zero gate voltage drain current Drain-source on-state resistance Forward transconductance a Dynamic IDSS RDS(on) gfs VDS = 600 V, VGS = 0 V VDS = 480 V, VGS = 0 V, TJ = 125 °C VGS = 10 V ID = 0.5 A VDS = 20 V, ID = 2.0 A Input capacitance Output capacitance Reverse transfer capacitance Effective output capacitance, energy related a Effective output capacitance, time  related b Ciss Coss Crss Co(.


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