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VS-GT80DA60U Datasheet, Equivalent, IGBT.

IGBT

IGBT

 

 

 

Part VS-GT80DA60U
Description IGBT
Feature www.
vishay.
com VS-GT80DA60U Vishay Semi conductors Insulated Gate Bipolar Tran sistor (Trench IGBT), 600 V, 80 A SOT- 227 PRIMARY CHARACTERISTICS VCES IC D C VCE(on) typical at 80 A, 25 °C IF (D C) Speed 600 V 80 A at TC = 97 °C 1.
8 3 V 56 A at TC = 100 °C 8 kHz to 30 kH z Package SOT-227 Circuit configurat ion Single switch with AP diode FEATU RES
• High speed trench gate field-st op IGBT positive temperature coefficien t
• TJ maximum = 175 °C
• FRED Pt anti-parallel diodes with ultrasoft r everse recovery
• Fully isolated pack age
• Very low internal inductance ( 5 nH typical)
• Industry sta .
Manufacture Vishay
Datasheet
Download VS-GT80DA60U Datasheet
Part VS-GT80DA60U
Description IGBT
Feature www.
vishay.
com VS-GT80DA60U Vishay Semi conductors Insulated Gate Bipolar Tran sistor (Trench IGBT), 600 V, 80 A SOT- 227 PRIMARY CHARACTERISTICS VCES IC D C VCE(on) typical at 80 A, 25 °C IF (D C) Speed 600 V 80 A at TC = 97 °C 1.
8 3 V 56 A at TC = 100 °C 8 kHz to 30 kH z Package SOT-227 Circuit configurat ion Single switch with AP diode FEATU RES
• High speed trench gate field-st op IGBT positive temperature coefficien t
• TJ maximum = 175 °C
• FRED Pt anti-parallel diodes with ultrasoft r everse recovery
• Fully isolated pack age
• Very low internal inductance ( 5 nH typical)
• Industry sta .
Manufacture Vishay
Datasheet
Download VS-GT80DA60U Datasheet

VS-GT80DA60U

VS-GT80DA60U
VS-GT80DA60U

VS-GT80DA60U

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