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VS-GT180DA120U Datasheet, Equivalent, IGBT.IGBT IGBT |
| Part | VS-GT180DA120U |
|---|---|
| Description | IGBT |
| Feature | www. vishay. com VS-GT180DA120U Vishay Se miconductors Insulated Gate Bipolar Tr ansistor (Trench IGBT), 180 A SOT-227 PRIMARY CHARACTERISTICS VCES IC(DC) V CE(on) typical at 100 A, 25 °C IF(DC) Speed 1200 V 185 A at 90 °C 1. 55 V 32 A at 90 °C 8 kHz to 30 kHz Package SOT-227 Circuit configuration Single switch with AP diode FEATURES • 1200 V trench and field stop technology • Low switching losses • Positive temp erature coefficient • Easy parallelin g • Square RBSOA • 10 μs short cir cuit capability • HEXFRED® antiparal lel diodes with ultrasoft reverse recov ery • TJ maximum = 150 °C • Fully . |
| Manufacture | Vishay |
| Datasheet |
| Part | VS-GT180DA120U |
|---|---|
| Description | IGBT |
| Feature | www. vishay. com VS-GT180DA120U Vishay Se miconductors Insulated Gate Bipolar Tr ansistor (Trench IGBT), 180 A SOT-227 PRIMARY CHARACTERISTICS VCES IC(DC) V CE(on) typical at 100 A, 25 °C IF(DC) Speed 1200 V 185 A at 90 °C 1. 55 V 32 A at 90 °C 8 kHz to 30 kHz Package SOT-227 Circuit configuration Single switch with AP diode FEATURES • 1200 V trench and field stop technology • Low switching losses • Positive temp erature coefficient • Easy parallelin g • Square RBSOA • 10 μs short cir cuit capability • HEXFRED® antiparal lel diodes with ultrasoft reverse recov ery • TJ maximum = 150 °C • Fully . |
| Manufacture | Vishay |
| Datasheet |
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