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VS-GT180DA120U Datasheet, Equivalent, IGBT.

IGBT

IGBT

 

 

 

Part VS-GT180DA120U
Description IGBT
Feature www.
vishay.
com VS-GT180DA120U Vishay Se miconductors Insulated Gate Bipolar Tr ansistor (Trench IGBT), 180 A SOT-227 PRIMARY CHARACTERISTICS VCES IC(DC) V CE(on) typical at 100 A, 25 °C IF(DC) Speed 1200 V 185 A at 90 °C 1.
55 V 32 A at 90 °C 8 kHz to 30 kHz Package SOT-227 Circuit configuration Single switch with AP diode FEATURES
• 1200 V trench and field stop technology
• Low switching losses
• Positive temp erature coefficient
• Easy parallelin g
• Square RBSOA
• 10 μs short cir cuit capability
• HEXFRED® antiparal lel diodes with ultrasoft reverse recov ery
• TJ maximum = 150 °C
• Fully .
Manufacture Vishay
Datasheet
Download VS-GT180DA120U Datasheet
Part VS-GT180DA120U
Description IGBT
Feature www.
vishay.
com VS-GT180DA120U Vishay Se miconductors Insulated Gate Bipolar Tr ansistor (Trench IGBT), 180 A SOT-227 PRIMARY CHARACTERISTICS VCES IC(DC) V CE(on) typical at 100 A, 25 °C IF(DC) Speed 1200 V 185 A at 90 °C 1.
55 V 32 A at 90 °C 8 kHz to 30 kHz Package SOT-227 Circuit configuration Single switch with AP diode FEATURES
• 1200 V trench and field stop technology
• Low switching losses
• Positive temp erature coefficient
• Easy parallelin g
• Square RBSOA
• 10 μs short cir cuit capability
• HEXFRED® antiparal lel diodes with ultrasoft reverse recov ery
• TJ maximum = 150 °C
• Fully .
Manufacture Vishay
Datasheet
Download VS-GT180DA120U Datasheet

VS-GT180DA120U

VS-GT180DA120U
VS-GT180DA120U

VS-GT180DA120U

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