VS-GT80DA120U

www.vishay.com VS-GT80DA120U Vishay Semiconductors Insulated Gate Bipolar Transistor (Trench IGBT), 80 A SOT-227 PRIMARY CHARACTERISTICS VCES 1200 V IC DC VCE(on) typical at 80 A, 25 °C 80 A at 104 °C 2.0 V Speed 8 kHz to 30 kHz Package SOT-227 Circuit configuration Single switch with AP diode FEATURES Trench IGBT technology Positive VCE(on) temperature coefficient Square RBSOA 10 μs short circuit capability HEXFRED® low Qrr, low switching energy TJ maximum = 150 °C Fully isolated package Very low internal inductance ( 5 nH typical) Industry standard outline UL approved file E78996 Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 BENEFITS Designed for increased operating efficiency in power conversion: UPS, SMPS, welding, induction heating Easy to assemble and parallel Direct mounting to heatsink Plug-in compatible with other SOT-227 packages Low EMI, requires less snubbing ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Collector to emitter voltage VCES Continuous collector current IC Pulsed collector current Clamped inductive load current ICM ILM Diode continuous forward current IF Single pulse forward current Gate to emitter voltage IFSM VGE Power dissipation, IGBT PD Power dissipation, diode Isolation voltage PD VISOL TEST CONDITIONS TC = 25 °C TC = 90 °C TC = 25 °C TC = 90 °C 10 ms sine or 6 ms rectangular pulse, TJ = 25 °C TC = 25 °C TC = 90 °C TC = 25 °C TC = 90 °C An...