MGDT100125-SM

www.vishay.com MGDT Series Vishay Custom Magnetics Miniaturized Gate Drive Planar Transformers ABSOLUTE MAXIMUM RATINGS PARAMETER CONDITIONS LIMITS UNITS Dielectric withstand voltage Drive to gate, 1 min Gate to gate, 1 min 3750 2500 VAC VAC Total power dissipation (1) TA = 25 °C 2.0 W Operating temperature (2) Continuous -55 to +125 °C Storage temperature Continuous -55 to +130 °C Frequency 100 to 500 kHz Size (L x W x H) 20.57 x 18.42 x 11.43 mm Terminals Through-hole and surface-mount Note (1) Derate at 33.3 mW/ºC above 25 ºC (2) Derate drive level to 60 V/μs above 85°C FEATURES Deliver MOSFET / IGBT gate power and timing signals simultaneously Available Directly drive high side MOSFETs / IGBTs on busses up to 1200 V Excellent rise time, overshoot, and peak current characteristics 8 mm minimum creepage and clearance from drive to gates Low profile planar package LF and SM versions are RoHS-compliant Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datasheet provides information about parts that are RoHS-compliant and / or parts that are non RoHS-compliant. For example, parts with lead (Pb) terminations are not RoHS-compliant. Please see the information / tables in this datasheet for details STANDARD ELECTRICAL SPECIFICATIONS PART NUMBER USEFUL FREQ. RANGE (kHz) TRANSFER RATIO (± 3 %) (1) DRIVE EXCITATION MAX. (Vμs) MGDT100100 MGDT100100LF MGDT100100-SM ...