Freescale Semiconductor Technical Data
RF Power LDMOS Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
These R...
Freescale Semiconductor Technical Data
RF Power LDMOS
Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
These RF power
transistors are designed for applications operating at frequencies between 960 and 1215 MHz such as distance measuring
equipment (DME), transponders and secondary radars for air traffic control.
These devices are suitable for use in pulse applications, including Mode S ELM.
Typical Pulse Performance: VDD = 50 Volts, IDQ = 200 mA
Application
Signal Type
Pout (1) (W)
Freq. (MHz)
Gps D (dB) (%)
Narrowband
Pulse
500 Peak
Short Pulse (128 sec, 10% Duty Cycle)
1030
19.7 62.0
Narrowband Mode S ELM
Pulse (48 (32 sec on, 18 sec off),
Period 2.4 msec, 6.4% Long--term Duty Cycle)
500 Peak
1030
19.7 62.0
Broadband
Pulse
500 Peak 960--1215 18.5 57.0
(128 sec, 10% Duty Cycle)
1. Minimum output power for each specified pulse condition.
Capable of Handling 10:1 VSWR @ 50 Vdc, 1030 MHz, 500 Watts Peak Power
Features
Characterized with Series Equivalent Large--Signal Impedance Parameters Internally Matched for Ease of Use Qualified up to a Maximum of 50 VDD Operation Integrated ESD Protection Greater Negative Gate--Source Voltage Range for Improved Class C
Operation
Document Number: MRF6V12500H Rev. 5, 7/2016
MRF6V12500H MRF6V12500HS MRF6V12500GS
960--1215 MHz, 500 W, 50 V PULSE
RF POWER LDMOS
TRANSISTORS
NI--780H--2L MRF6V12500H
NI--780S--2L MRF6V12500HS
NI--780GS--2L MRF6V12500GS
Gate 2
1 Drain
(Top View) Note: The bac...