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MRF6V12500GS Datasheet, Equivalent, LDMOS Transistors.RF Power LDMOS Transistors RF Power LDMOS Transistors |
| Part | MRF6V12500GS |
|---|---|
| Description | RF Power LDMOS Transistors |
| Feature | Freescale Semiconductor Technical Data
RF Power LDMOS Transistors
N--Channel E nhancement--Mode Lateral MOSFETs
These RF power transistors are designed for applications operating at frequencies b etween 960 and 1215 MHz such as distanc e measuring
equipment (DME), transponde rs and secondary radars for air traffic control. These devices are suitable fo r use in pulse applications, including Mode S ELM. Typical Pulse Performance : VDD = 50 Volts, IDQ = 200 mA Applica tion Signal Type Pout (1) (W) Freq. (MHz) Gps D (dB) (%) Narrowband P ulse 500 Peak Short Pulse (128 sec , 10% Duty Cycle) . |
| Manufacture | NXP |
| Datasheet |
| Part | MRF6V12500GS |
|---|---|
| Description | RF Power LDMOS Transistors |
| Feature | Freescale Semiconductor Technical Data
RF Power LDMOS Transistors
N--Channel E nhancement--Mode Lateral MOSFETs
These RF power transistors are designed for applications operating at frequencies b etween 960 and 1215 MHz such as distanc e measuring
equipment (DME), transponde rs and secondary radars for air traffic control. These devices are suitable fo r use in pulse applications, including Mode S ELM. Typical Pulse Performance : VDD = 50 Volts, IDQ = 200 mA Applica tion Signal Type Pout (1) (W) Freq. (MHz) Gps D (dB) (%) Narrowband P ulse 500 Peak Short Pulse (128 sec , 10% Duty Cycle) . |
| Manufacture | NXP |
| Datasheet |
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