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MRFE6VP61K25N Datasheet, Equivalent, LDMOS Transistors.RF Power LDMOS Transistors RF Power LDMOS Transistors |
| Part | MRFE6VP61K25N |
|---|---|
| Description | RF Power LDMOS Transistors |
| Feature | Freescale Semiconductor Technical Data
Document Number: MRFE6VP61K25N Rev. 2, 4/2015 RF Power LDMOS Transistors High Ruggedness N--Channel Enhancement--Mod e Lateral MOSFETs These high ruggednes s devices are designed for use in high VSWR industrial, medical, broadcast, ae rospace and mobile radio applications. Their unmatched input and output design allows for wide frequency range use fr om 1. 8 to 600 MHz. Typical Performance : VDD = 50 Vdc Frequency (MHz) Signal Type 87. 5–108 (1,2) CW 230 (3) P ulse (100 sec, 20% Duty Cycle) Pout (W) 1309 CW 1250 Peak Gps (dB) 24. 1 2 3. 0 D (%) 77. 6 7 . |
| Manufacture | NXP |
| Datasheet |
| Part | MRFE6VP61K25N |
|---|---|
| Description | RF Power LDMOS Transistors |
| Feature | Freescale Semiconductor Technical Data
Document Number: MRFE6VP61K25N Rev. 2, 4/2015 RF Power LDMOS Transistors High Ruggedness N--Channel Enhancement--Mod e Lateral MOSFETs These high ruggednes s devices are designed for use in high VSWR industrial, medical, broadcast, ae rospace and mobile radio applications. Their unmatched input and output design allows for wide frequency range use fr om 1. 8 to 600 MHz. Typical Performance : VDD = 50 Vdc Frequency (MHz) Signal Type 87. 5–108 (1,2) CW 230 (3) P ulse (100 sec, 20% Duty Cycle) Pout (W) 1309 CW 1250 Peak Gps (dB) 24. 1 2 3. 0 D (%) 77. 6 7 . |
| Manufacture | NXP |
| Datasheet |
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