Freescale Semiconductor Technical Data
Document Number: MRFE6VP61K25N Rev. 2, 4/2015
RF Power LDMOS Transistors
High R...
Freescale Semiconductor Technical Data
Document Number: MRFE6VP61K25N Rev. 2, 4/2015
RF Power LDMOS
Transistors
High Ruggedness N--Channel Enhancement--Mode Lateral MOSFETs
These high ruggedness devices are designed for use in high VSWR
industrial, medical, broadcast, aerospace and mobile radio applications. Their
unmatched input and output design allows for wide frequency range use from 1.8 to 600 MHz.
Typical Performance: VDD = 50 Vdc
Frequency (MHz)
Signal Type
87.5–108 (1,2)
CW
230 (3)
Pulse (100 sec, 20% Duty Cycle)
Pout (W) 1309 CW 1250 Peak
Gps (dB) 24.1 23.0
D (%) 77.6 72.3
Load Mismatch/Ruggedness
Frequency
(MHz)
Signal Type
VSWR
Pin Test
(W)
Voltage
Result
230 (3)
Pulse
> 65:1 at all 11.5 Peak
50
No Device
(100 sec, 20% Phase Angles (3 dB
Degradation
Duty Cycle)
Overdrive)
1. Measured in 87.5–108 MHz broadband reference circuit. 2. The values shown are the center band performance numbers across the indicated
frequency range. 3. Measured in 230 MHz narrowband test circuit.
MRFE6VP61K25N MRFE6VP61K25GN
1.8–600 MHz, 1250 W CW, 50 V WIDEBAND
RF POWER LDMOS
TRANSISTORS
OM--1230--4L PLASTIC
MRE6VP61K25N
OM--1230G--4L PLASTIC
MRE6VP61K25GN
Features
Unmatched Input and Output Allowing Wide Frequency Range Utilization
Device can be used Single--Ended or in a Push--Pull Configuration
Qualified up to a Maximum of 50 VDD Operation Characterized from 30 to 50 V for Extended Power Range Suitable for Linear Application with Appropria...
