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MRFE6VP61K25HSR5 Datasheet, Equivalent, LDMOS Transistors.

RF Power LDMOS Transistors

RF Power LDMOS Transistors

 

 

 

Part MRFE6VP61K25HSR5
Description RF Power LDMOS Transistors
Feature Freescale Semiconductor Technical Data RF Power LDMOS Transistors High Ruggedn ess N--Channel Enhancement--Mode Latera l MOSFETs These high ruggedness device s are designed for use in high VSWR ind ustrial (including laser and plasma exc iters), broadcast (analog and digital), aerospace and radio/land mobile applic ations.
They are unmatched input and ou tput designs allowing wide frequency ra nge utilization, between 1.
8 and 600 MH z.
Typical Performance: VDD = 50 Volt s, IDQ = 100 mA Signal Type Pout (W) f (MHz) Gps (dB) D (%) Pulse (10 0 sec, 20% Duty Cycle) CW 1250 Peak 1250 CW 230 230 .
Manufacture NXP
Datasheet
Download MRFE6VP61K25HSR5 Datasheet
Part MRFE6VP61K25HSR5
Description RF Power LDMOS Transistors
Feature Freescale Semiconductor Technical Data RF Power LDMOS Transistors High Ruggedn ess N--Channel Enhancement--Mode Latera l MOSFETs These high ruggedness device s are designed for use in high VSWR ind ustrial (including laser and plasma exc iters), broadcast (analog and digital), aerospace and radio/land mobile applic ations.
They are unmatched input and ou tput designs allowing wide frequency ra nge utilization, between 1.
8 and 600 MH z.
Typical Performance: VDD = 50 Volt s, IDQ = 100 mA Signal Type Pout (W) f (MHz) Gps (dB) D (%) Pulse (10 0 sec, 20% Duty Cycle) CW 1250 Peak 1250 CW 230 230 .
Manufacture NXP
Datasheet
Download MRFE6VP61K25HSR5 Datasheet

MRFE6VP61K25HSR5

MRFE6VP61K25HSR5
MRFE6VP61K25HSR5

MRFE6VP61K25HSR5

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