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LM27222 Dataheets PDF



Part Number LM27222
Manufacturers Texas Instruments
Logo Texas Instruments
Description High-Speed 4.5A Synchronous MOSFET Driver
Datasheet LM27222 DatasheetLM27222 Datasheet (PDF)

LM27222 www.ti.com SNVS306B – SEPTEMBER 2004 – REVISED MARCH 2013 LM27222 High-Speed 4.5A Synchronous MOSFET Driver Check for Samples: LM27222 FEATURES 1 •2 Adaptive Shoot-through Protection • 10ns Dead Time • 8ns Propagation Delay • 30ns Minimum On-time • 0.4Ω Pull-down and 0.9Ω Pull-up Drivers • 4.5A Peak Driving Current • MOSFET Tolerant Design • 5µA Quiescent Current • 30V Maximum Input Voltage in Buck Configuration • 4V to 6.85V Operating Voltage • SOIC-8 and WSON Packages APPLICATIONS .

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LM27222 www.ti.com SNVS306B – SEPTEMBER 2004 – REVISED MARCH 2013 LM27222 High-Speed 4.5A Synchronous MOSFET Driver Check for Samples: LM27222 FEATURES 1 •2 Adaptive Shoot-through Protection • 10ns Dead Time • 8ns Propagation Delay • 30ns Minimum On-time • 0.4Ω Pull-down and 0.9Ω Pull-up Drivers • 4.5A Peak Driving Current • MOSFET Tolerant Design • 5µA Quiescent Current • 30V Maximum Input Voltage in Buck Configuration • 4V to 6.85V Operating Voltage • SOIC-8 and WSON Packages APPLICATIONS • High Current Buck And Boost Voltage Converters • Fast Transient DC/DC Power Supplies • Single Ended Forward Output Rectification • CPU And GPU Core Voltage Regulators DESCRIPTION The LM27222 is a dual N-channel MOSFET driver designed to drive MOSFETs in push-pull configurations as typically used in synchronous buck regulators. The LM27222 takes the PWM output from a controller and provides the proper timing and drive levels to the power stage MOSFETs. Adaptive shootthrough protection prevents damaging and efficiency reducing shoot-through currents, thus ensuring a robust design capable of being used with nearly any MOSFET. The adaptive shoot-through protection circuitry also reduces the dead time down to as low as 10ns, ensuring the highest operating efficiency. The peak sourcing and sinking current for each driver of the LM27222 is about 3A and 4.5Amps respectively with a Vgs of 5V. System performance is also enhanced by keeping propagation delays down to 8ns. Efficiency is once again improved at all load currents by supporting synchronous, nonsynchronous, and diode emulation modes through the LEN pin. The minimum output pulse width realized at the output of the MOSFETs is as low as 30ns. This enables high operating frequencies at very high conversion ratios in buck regulator designs. To support low power states in notebook systems, the LM27222 draws only 5µA from the 5V rail when the IN and LEN inputs are low or floating. Typical Application VCC 4V to 6.85V R1 C1 D1 U1 6 VCC CB (to controller) 5 LEN HG (to controller) 4 LM27222 IN SW 8 GND LG 3 2 1 7 C2 0.33 PF VIN Q1 up to 30V + C3 L1 VOUT Q2 + C4 0.5V to Vin - 0.5V 1 Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet. All trademarks are the property of their respective owners. 2 PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of the Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters. Copyright © 2004–2013, Texas Instruments Incorporated LM27222 SNVS306B – SEPTEMBER 2004 – REVISED MARCH 2013 Connection Diagram SW 1 HG 2 CB 3 IN 4 8 GND 7 LG 6 VCC 5 LEN Figure 1. Top View SOIC-8 (Package # D0008A) θJA = 172°C/W or WSON-8 (Package # NGT0008A) θJA = 39°C/W www.ti.com Pin # 1 2 3 4 5 6 7 8 Pin Name SW HG CB IN LEN VCC LG GND PIN DESCRIPTIONS Pin Function High-side driver return. Should be connected to the common node of high and low-side MOSFETs. High-side gate drive output. Should be connected to the high-side MOSFET gate. Pulled down internally to SW with a 10K resistor to prevent spurious turn on of the high-side MOSFET when the driver is off. Bootstrap. Accepts a bootstrap voltage for powering the high-side driver. Accepts a PWM signal from a controller. Active High. Pulled down internally to GND with a 150K resistor to prevent spurious turn on of the high-side MOSFET when the controller is inactive. Low-side gate enable. Active High. Pulled down internally to GND with a 150K resistor to prevent spurious turn-on of the low-side MOSFET when the controller is inactive. Connect to +5V supply. Low-side gate drive output. Should be connected to low-side MOSFET gate. Pulled down internally to GND with a 10K resistor to prevent spurious turn on of the low-side MOSFET when the driver is off. Ground. Block Diagram VCC LEN 150k IN 150k Logic Shoot-through Protection Level Shifter CB HG 10k SW + - LG 10k GND These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates. 2 Submit Documentation Feedback Product Folder Links: LM27222 Copyright © 2004–2013, Texas Instruments Incorporated LM27222 www.ti.com SNVS306B – SEPTEMBER 2004 – REVISED MARCH 2013 Absolute Maximum Ratings (1) VCC to GND CB to GND CB to SW SW to GND (2) LEN, IN, LG to GND HG to GND Junction Temperature Power Dissipation (3) Storage Temperature ESD Susceptibility Human Body Model -0.3V to 7V -0.3V to 36V -0.3V to 7V -2V to 36V -0.3V to VCC + 0.3V ≤ 7V -0.3V to 36V +150°C 720mW −65° to 150°C 2kV (1) Absolute Maximum Ratings are limits beyond which damage to the d.


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