Recovery Diode. VS-E4PH3006LHN3 Datasheet

VS-E4PH3006LHN3 Diode. Datasheet pdf. Equivalent

VS-E4PH3006LHN3 Datasheet
Recommendation VS-E4PH3006LHN3 Datasheet
Part VS-E4PH3006LHN3
Description Hyperfast Soft Recovery Diode
Feature VS-E4PH3006LHN3; www.vishay.com VS-E4PH3006LHN3 Vishay Semiconductors Hyperfast Soft Recovery Diode, 30 A FRED Pt® .
Manufacture Vishay
Datasheet
Download VS-E4PH3006LHN3 Datasheet




Vishay VS-E4PH3006LHN3
www.vishay.com
VS-E4PH3006LHN3
Vishay Semiconductors
Hyperfast Soft Recovery Diode,
30 A FRED Pt® Gen 4
2
1
3
TO-247AD 2L
Base cathode
2
1
Cathode
3
Anode
PRODUCT SUMMARY
IF(AV)
VR
VF at IF
trr typ.
TJ max.
Package
Diode variation
30 A
600 V
1.37 V
see Recovery table
175 °C
TO-247AD 2L
Single die
FEATURES
• Gen 4 FRED Pt® technology
• Low IRRM and reverse recovery charge
• Very low forward voltage drop
• Polymide passivated chip for high reliability
standard
• 175 °C operating junction temperature
• AEC-Q101 qualified, meets JESD 201 class 1
whisker test
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION
Gen 4 Fred technology, state of the art, ultrafast VF, soft
switching optimized for Discontinuous (Critical) Mode (DCM)
and IGBT F/W diode.
The minimized conduction loss, optimized stored charge
and low recovery current minimized the switching losses
and reduce over dissipation in the switching element and
snubbers.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Cathode to anode voltage
Average rectified current
Single pulse forward current
Operating junction and storage temperatures
VR
IF(AV)
IFSM
TJ, TStg
TEST CONDITIONS
TC = 122 °C
TC = 25 °C, tp = 8.3 ms half sine wave
MAX.
600
30
240
-55 to +175
UNITS
V
A
°C
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
Breakdown voltage, blocking voltage
Forward voltage
Reverse leakage current
Junction capacitance
VBR, VR
VF
IR
CT
IR = 100 μA
IF = 30 A
IF = 60 A
IF = 30 A, TJ = 125 °C
IF = 60 A, TJ = 125 °C
IF = 30 A, TJ = 150 °C
IF = 60 A, TJ = 150 °C
VR = VR rated
TJ = 150 °C, VR = VR rated
VR = 600 V
MIN.
600
-
-
-
-
-
-
-
-
-
TYP.
-
1.65
1.95
1.44
1.78
1.37
1.68
-
-
18.3
MAX.
-
2
-
-
-
1.6
-
50
500
-
UNITS
V
μA
pF
Revision: 19-Jan-17
1 Document Number: 95942
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000



Vishay VS-E4PH3006LHN3
www.vishay.com
VS-E4PH3006LHN3
Vishay Semiconductors
DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
Reverse recovery time
Peak recovery current
Reverse recovery charge
trr
IRRM
Qrr
TJ = 25 °C
TJ = 125 °C
TJ = 25 °C
TJ = 125 °C
TJ = 25 °C
TJ = 125 °C
IF = 30 A
dIF/dt = 1000 A/μs
VR = 400 V
-
-
-
-
-
-
TYP.
55
75
13
23
500
1250
MAX.
-
-
-
-
-
-
UNITS
ns
A
nC
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Thermal resistance, junction to case
Thermal resistance, case to heat sink
RthJC
RthCS
Mounting surface, flat, smooth and greased
Weight
Mounting torque
Marking device
Case style TO-247AD 2L
MIN.
-
-
-
-
6.0
(5)
TYP. MAX.
-1
0.4 -
6.0 -
0.21 -
- 12
(20)
E4PH3006LH
UNITS
°C/W
g
oz.
kgf · cm
(lbf · in)
1000
100
TJ = 175 °C
10
TJ = 150 °C
TJ = 125 °C
TJ = 25 °C
1
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
VF - Forward Voltage Drop (V)
Fig. 1 - Typical Forward Voltage Drop Characteristics
100
1000
100
10
175 °C
150 °C
125 °C
1
25 °C
0.1
0.01
0.001
0
200 400 600
VR - Reverse Voltage (V)
Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage
10
0
100 200 300 400 500
VR - Reverse Voltage (V)
600
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
Revision: 19-Jan-17
2 Document Number: 95942
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000



Vishay VS-E4PH3006LHN3
www.vishay.com
10
0.50
0.20
0.10
0.05
1 0.02
0.01
0.1
single pulse
VS-E4PH3006LHN3
Vishay Semiconductors
0.01
0.001
0.01 0.1
1
t1 - Rectangular Pulse Duration (s)
Fig. 4 - Max. Thermal Impedance ZthJC Characteristics
10
180
160
140 DC
120
Square wave (D = 0.50)
100 80 % rated VR applied
See note (1)
80
0 10 20 30 40 50
IF(AV) - Average Forward Current (A)
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
180
160 RMS limit
140
120
100
80 D = 0.01
D = 0.05
60 D = 0.10
D = 0.20
40 D = 0.50
20
0
0 10 20 30 40 50 60 70 80 90
IF(AV) - Average Forward Current (A)
Fig. 6 - Forward Power Loss Characteristics
Note
(1) Formula used: TC = TJ - (Pd + PdREV) x RthJC;
Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 5);
PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = rated VR
110
100
90 Tj = 125 °C
80
70 25°C
60
50
400 500 600 700 800 900 1000
dIF/dt (A/μs)
Fig. 7 - Typical Reverse Recovery Time vs. dIF/dt
1400
1200
125 °C
1000
800
600 25 °C
400
200
400 500 600 700 800 900 1000
dIF/dt (A/μs)
Fig. 8 - Typical Stored Charge vs. dIF/dt
Revision: 19-Jan-17
3 Document Number: 95942
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000







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