Hyperfast Soft Recovery Diode
www.vishay.com
VS-E4PH3006LHN3
Vishay Semiconductors
Hyperfast Soft Recovery Diode, 30 A FRED Pt® Gen 4
2 1
3 TO-247A...
Description
www.vishay.com
VS-E4PH3006LHN3
Vishay Semiconductors
Hyperfast Soft Recovery Diode, 30 A FRED Pt® Gen 4
2 1
3 TO-247AD 2L
Base cathode 2
1 Cathode
3 Anode
PRODUCT SUMMARY
IF(AV) VR VF at IF trr typ. TJ max. Package Diode variation
30 A 600 V 1.37 V see Recovery table 175 °C TO-247AD 2L Single die
FEATURES Gen 4 FRED Pt® technology
Low IRRM and reverse recovery charge Very low forward voltage drop
Polymide passivated chip for high reliability standard
175 °C operating junction temperature
AEC-Q101 qualified, meets JESD 201 class 1 whisker test
Material categorization: for definitions of compliance please see www.vishay.com/doc?99912
DESCRIPTION
Gen 4 Fred technology, state of the art, ultrafast VF, soft switching optimized for Discontinuous (Critical) Mode (DCM) and IGBT F/W diode. The minimized conduction loss, optimized stored charge and low recovery current minimized the switching losses and reduce over dissipation in the switching element and snubbers.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Cathode to anode voltage Average rectified current Single pulse forward current Operating junction and storage temperatures
VR IF(AV) IFSM TJ, TStg
TEST CONDITIONS
TC = 122 °C TC = 25 °C, tp = 8.3 ms half sine wave
MAX. 600 30 240 -55 to +175
UNITS V
A °C
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
Breakdown voltage, blocking voltage
Forward voltage
Reverse leakage current Junction capacitance...
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