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Power Stage. SiC783ACD Datasheet |
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www.vishay.com
SiC783ACD
Vishay Siliconix
50 A, VRPower® Integrated Power Stage
DESCRIPTION
The SiC783A is an integrated power stage solution
optimized for synchronous buck applications to offer
high current, high efficiency and high power density
performance. Packaged in Vishay’s proprietary MLP 6 mm
x 6 mm package, SiC783A enables voltage regulator
designs to deliver currents up to 50 A per phase.
The internal power MOSFETs utilize Vishay’s
state-of-the-art trench MOSFET technology that delivers
industry benchmark performance to significantly reduce
switching and conduction losses.
The SiC783A incorporates an advanced MOSFET gate
driver IC that features high current driving capability,
adaptive dead-time control, an integrated bootstrap
Schottky diode, and a thermal warning (THWn) that alerts
the system of excessive junction temperature. This driver is
compatible with wide range of PWM controllers and
supports tri-state PWM logic (3.3 V) as well as zero current
detect to improve light load efficiency.
FEATURES
• Thermally enhanced PowerPAK® MLP66-40L package
• Industry benchmark MOSFET with integrated Schottky
diode
• Delivers up to 50 A continuous current
• High frequency operation up to 1 MHz
• Optimized for 12 V input rail applications
• 3.3 V PWM logic with tri-state threshold
• Zero current detect control for light load efficiency
improvement.
• Short PWM propagation delay (< 20 ns)
• Thermal monitor flag
• Faster disable
• VCIN under voltage lock out (UVLO)
APPLICATIONS
• Synchronous buck converters
• Multi-phase VRDs for CPU, GPU and memory
• DC/DC POL modules
TYPICAL APPLICATION DIAGRAM
5V
INPUT
PWM
controller
V CIN
ZCD_EN#
DSBL#
PWM
THWn
Gate
driver
BOOT
PHASE
V SWH
OUTPUT
Fig. 1 - SiC783A Typical Application Diagram
S14-1639-Rev. B, 25-Aug-14
1
Document Number: 64902
For technical questions, contact: powerictechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
|
www.vishay.com
PINOUT CONFIGURATION
SiC783ACD
Vishay Siliconix
ZCD_EN# 1
VCIN 2
VDRV 3
BOOT 4
CGND 5
GH 6
PHASE 7
VIN 8
VIN 9
VIN 10
P1
CGND
P2
VIN
P3
VSWH
30 VSWH
29 VSWH
28 PGND
27 PGND
26 PGND
25 PGND
24 PGND
23 PGND
22 PGND
21 PGND
VSWH 30
VSWH 29
PGND 28
PGND 27
PGND 26
PGND 25
PGND 24
PGND 23
PGND 22
PGND 21
P3
VSWH
P1
CGND
P2
VIN
1 ZCD_EN#
2 VCIN
3 VDRV
4 BOOT
5 CGND
6 GH
7 PHASE
8 VIN
9 VIN
10 VIN
Top view
PIN DESCRIPTION
PIN NUMBER
1
2
3
4
5, 37, P1
6
7
8 to 14, P2
15, 29 to 35, P3
16 to 28
36
38
39
40
NAME
ZCD_EN#
VCIN
VDRV
BOOT
CGND
GH
PHASE
VIN
VSWH
PGND
GL
THWn
DSBL#
PWM
Fig. 2 - SiC783A Pin Configuration
Bottom view
FUNCTION
ZCD control. Active low
Supply voltage for internal logic circuitry
Supply voltage for internal gate driver
High-side driver bootstrap voltage
Analog ground for the driver IC
High-side gate signal
Return path of high-side gate driver
Power stage input voltage. Drain of high-side MOSFET
Switch node of the power stage
Power ground
Low-side gate signal
Thermal warning open drain output
Disable pin. Active low
PWM control input
ORDERING INFORMATION
PART NUMBER
SiC783ACD-T1-GE3
SiC783ADB
PACKAGE
PowerPAK MLP66-40L
Reference Board
MARKING CODE
SiC783A
S14-1639-Rev. B, 25-Aug-14
2
Document Number: 64902
For technical questions, contact: powerictechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
|
www.vishay.com
SiC783ACD
Vishay Siliconix
ABSOLUTE MAXIMUM RATINGS
ELECTRICAL PARAMETER
SYMBOL
LIMITS
UNIT
Input Voltage
Control Logic Supply Voltage
Drive Supply Voltage
Switch Node (DC voltage)
Switch Node (AC voltage) (1)
BOOT Voltage (DC voltage)
BOOT Voltage (AC voltage) (2)
VIN
VCIN
VDRV
VSWH
VBOOT
-0.3 to +20
-0.3 to +7
-0.3 to +7
-0.3 to +20
-7 to +27
27
34
V
BOOT to PHASE (DC voltage)
BOOT to PHASE (AC voltage) (3)
VBOOT_PHASE
-0.3 to +7
-0.3 to +8
All Logic Inputs and Outputs (PWM, DSBL#,
ZCD_EN# and THWn)
-0.3 to VCIN +0.3
Max. Operating Junction Temperature
Ambient Temperature
Storage Temperature
TJ
TA
150
-40 to +125
-65 to +150
°C
Electrostatic Discharge Protection
Human body model, JESD22-A114
Charged device model, JESD22-C101
4000
1000
V
Notes
• Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the
specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
(1) The specification values indicate “AC voltage” is VSWH to PGND, -7 V (< 50 ns, 10 μJ), minimum and 27 V (< 50 ns), maximum.
(2) The specification value indicates “AC voltage” is VBOOT to PGND, 34 V (< 50 ns) maximum.
(3) The specification value indicates “AC voltage” is VBOOT to VPHASE, 8 V (< 20 ns) maximum.
RECOMMENDED OPERATING RANGE
ELECTRICAL
Input Voltage (VIN)
Drive Supply Voltage (VDRV)
Control Logic Supply Voltage (VCIN)
Switch Node (VSWH, DC voltage)
BOOT to PHASE (VBOOT_PHASE, DC voltage)
Thermal Resistance
Thermal Resistance from Junction to Case
Thermal Resistance from Junction to PAD
MIN.
4.5
4.5
4.5
-
4
-
-
TYP.
-
5
5
-
4.5
2.5
1
MAX.
16
5.5
5.5
20
5.5
-
-
UNIT
V
°C/W
S14-1639-Rev. B, 25-Aug-14
3
Document Number: 64902
For technical questions, contact: powerictechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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